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BR93LC66RFJ

Description
EEPROM, 256X16, Serial, CMOS, PDSO8, SOP-8
Categorystorage    storage   
File Size94KB,12 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BR93LC66RFJ Overview

EEPROM, 256X16, Serial, CMOS, PDSO8, SOP-8

BR93LC66RFJ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSOIC
package instructionLSOP, SOP8,.25
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum clock frequency (fCLK)1 MHz
Data retention time - minimum10
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
length4.9 mm
memory density4096 bit
Memory IC TypeEEPROM
memory width16
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256X16
Package body materialPLASTIC/EPOXY
encapsulated codeLSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE, LOW PROFILE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2/5.5 V
Certification statusNot Qualified
Maximum seat height1.65 mm
Serial bus typeMICROWIRE
Maximum standby current0.000003 A
Maximum slew rate0.003 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3.9 mm
Maximum write cycle time (tWC)25 ms
write protectSOFTWARE
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF /
BR93LC66FJ / BR93LC66RFJ / BR93LC66FV
256×16bits serial EEPROM
BR93LC66 / BR93LC66F / BR93LC66RF /
BR93LC66FJ / BR93LC66RFJ / BR93LC66FV
The BR93LC66 series are CMOS serial input/output-type memory circuits (EEPROMs) that can be programmed
electrically. Each is configured of 256 words x 16 bits (4096 bits), and each word can be accessed individually and data
read from it and written to it.
Operation control is performed using five types of commands. The commands, addresses, and data are input through the
DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be
output from the DO pin.
Applications
VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches, and other
battery-powered equipment requiring low voltage and low current
Features
1) 256 words x 16 bits EEPROM
2) Operating voltage range
When reading: 2.0 to 5.5 V
When writing: 2.7 to 5.5 V
3) Low current consumption
Operating (at 5 V) : 3mA (max.)
Standby (at 5 V) : 5µA (max.)
4) Addresses can be incremented automatically during
read operations.
5) Auto erase and auto complete functions can be used
during write operations.
6) A write instruction inhibit function allows:
- write protection when power supply voltage is low.
- write disable state at power up.
- writing using command codes.
7) Compact packages
8) Display of READY / BUSY status
9) TTL-compatible input/output
10) Rewriting possible up to 100,000 times
11) Data can be stored for ten years without corruption.
Block diagram
Power supply
CS
Command code
voltage detector
Control
High voltage
Write disable
generator
SK
Clock generation
Address
Command
Address
8bits
buffer
decoder
DI
8bits
4096bits
register
Data
R/W
EEPROM array
16bits
16bits
register
amplifier
DO
Dummy bits

BR93LC66RFJ Related Products

BR93LC66RFJ BR93LC66FJ
Description EEPROM, 256X16, Serial, CMOS, PDSO8, SOP-8 EEPROM, 256X16, Serial, CMOS, PDSO8, SOP-8
Is it Rohs certified? conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor
Parts packaging code SOIC SOIC
package instruction LSOP, SOP8,.25 LSOP, SOP8,.25
Contacts 8 8
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum clock frequency (fCLK) 1 MHz 1 MHz
Data retention time - minimum 10 10
Durability 100000 Write/Erase Cycles 100000 Write/Erase Cycles
JESD-30 code R-PDSO-G8 R-PDSO-G8
length 4.9 mm 4.9 mm
memory density 4096 bit 4096 bit
Memory IC Type EEPROM EEPROM
memory width 16 16
Number of functions 1 1
Number of terminals 8 8
word count 256 words 256 words
character code 256 256
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
organize 256X16 256X16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LSOP LSOP
Encapsulate equivalent code SOP8,.25 SOP8,.25
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, LOW PROFILE SMALL OUTLINE, LOW PROFILE
Parallel/Serial SERIAL SERIAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
power supply 2/5.5 V 2/5.5 V
Certification status Not Qualified Not Qualified
Maximum seat height 1.65 mm 1.65 mm
Serial bus type MICROWIRE MICROWIRE
Maximum standby current 0.000003 A 0.000003 A
Maximum slew rate 0.003 mA 0.003 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V
surface mount YES YES
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal form GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 10
width 3.9 mm 3.9 mm
Maximum write cycle time (tWC) 25 ms 25 ms
write protect SOFTWARE SOFTWARE
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