EEWORLDEEWORLDEEWORLD

Part Number

Search

BU9882

Description
EEPROM, PDIP14, DIP-14
Categorystorage    storage   
File Size663KB,23 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance  
Download Datasheet Parametric View All

BU9882 Overview

EEPROM, PDIP14, DIP-14

BU9882 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeDIP
package instruction,
Contacts14
Reach Compliance Codecompliant
JESD-30 codeR-PDIP-T14
Memory IC TypeEEPROM
Number of terminals14
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Serial bus typeI2C
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Memory for Plug & Play
EDID Memory
(For display)
BR24C21,BR24C21F,BR24C21FJ,BR24C21FV,
BU9882-W,BU9882F-W,BU9882FV-W
BR24C21,BR24C21F,BR24C21FJ,BR24C21FV
●Description
TM
TM
BR24C21F,BR24C21FJ,BR24C21FV are serial EEPROMs that support DDC1 /DDC2 interfaces
for Plug and Play displays.
●Features
TM
TM
1) Compatible with both DDC1 /DDC2
2) Operating voltage range: 2.5V to 5.5V
3) Page write function: 8bytes
4) Low power consumption
Active (at 5V)
: 1.5mA (typ)
Stand-by (at 5V) : 0.1µA (typ)
5) Address auto increment function during Read operation
6) Data security
Write enable feature (VCLK)
Write protection at low Vcc
7) Various packages available: DIP-T8(BR24C21) / SOP8(BR24C21F) / SOP-J8(BR24C21FJ) / SSOP-B8(BR24C21FV)
8) Initial data=FFh
9) Data retention: 10years
10) Rewriting possible up to 100,000 times
No.09002EAT02
●Absolute
maximum ratings (Ta=25℃)
Parameter
Supply Voltage
Symbol
V
CC
800
450
450
350
Rating
-0.3½+6.5
(DIP-T8)
(SOP8)
(SOP-J8)
(SSOP-B8)
-65½+125
-40½+85
-0.3½V
CC
+0.3
Unit
V
*1
*2
*3
*4
Power Dissipation
Pd
mW
Storage Temperature
Operating Temperature
Terminal Voltage
Tstg
Topr
-
V
* Reduce by 8.0 mW/C over 25C (*1), 4.5mW/℃ (*2,3), and 3.5mW/℃ (*4)
●Memory
cell characteristics
Parameter
Supply Voltage
Input Voltage
Symbol
V
CC
VIN
Rating
2.5½5.5
0½V
CC
Unit
V
V
●Recommended
operating conditions
Parameter
Write/Erase Cycle
Data Retention
Min.
100,000
10
Limits
Typ.
-
-
Max.
-
-
Unit
Cycle
Year
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
1/22
2009.04 - Rev.A

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 640  965  1492  2835  937  13  20  31  58  19 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号