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FSS145

Description
TRANSISTOR,MOSFET,P-CHANNEL,45V V(BR)DSS,8A I(D),SO
CategoryDiscrete semiconductor    The transistor   
File Size34KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

FSS145 Overview

TRANSISTOR,MOSFET,P-CHANNEL,45V V(BR)DSS,8A I(D),SO

FSS145 Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)8 A
Maximum drain current (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2.9 W
surface mountYES
Ordering number : ENA0341
FSS145
P-Channel Silicon MOSFET
FSS145
Features
General-Purpose Switching Device
Applications
Load switching applications.
Low ON-resistance.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
Tch
Tstg
Duty cycle≤1%
Duty cycle≤1%
Mounted on a ceramic board
(1200mm
2
!0.8mm),
PW≤10s
Conditions
Ratings
-
-45
±20
--8
--8.5
-
-32
2.9
150
--55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=--1mA, VGS=0V
VDS=-
-45V, VGS=0V
VGS=±16V, VDS=0V
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-8A
ID=--8A, VGS=-
-10V
ID=--4A, VGS=-
-4V
VDS=-
-20V, f=1MHz
VDS=-
-20V, f=1MHz
VDS=-
-20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
--45
--1
±10
--1.2
10
17
18
28
3490
370
290
35
65
270
125
24
40
--2.6
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
Marking : S145
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22006PA MS IM TB-00002039 No. A0341-1/4

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