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RS3J

Description
3 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size31KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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RS3J Overview

3 A, 600 V, SILICON, RECTIFIER DIODE

RS3J Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionSMC, 2 PIN
Reach Compliance Codecompli
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineTS 16949
Maximum repetitive peak reverse voltage600 V
Maximum reverse current10 µA
Maximum reverse recovery time0.25 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
RS3A - RS3K
PRV : 50 - 800 Volts
Io : 3.0 Amperes
FEATURES :
* For surface mount applications
* Low profile package
* Built-in stran relief,
ideal for automated placement
* Fast switching for high efficiency
* Glass passivated chip junction
* High temperature soldering :
250
°C/10
seconds at terminals
* Pb / RoHS Free
SURFACE MOUNT
FAST RECOVERY RECTIFIERS
SMC (DO-214AB)
0.060(1.52)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.280(7.11)
0.260(6.60)
0.008(0.203)
0.004(0.102)
0.121(3.07)
0.115(2.92)
0.245(6.22)
0.220(5.59)
0.103(2.62)
0.079(2.00)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMC Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.21 gram
Dimensions in inches and (millimeter)
Rating at 25
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
L
= 55
°C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method) T
L
= 75
°C
Maximum Instantaneous Forward Voltage at I
F
= 3.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T
A
= 25
°C
T
A
= 125
°C
SYMBOL RS3A RS3B RS3D RS3G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
C
J
R
θJA
R
θJL
T
J
, T
STG
150
60
50
15
- 55 to + 150
50
35
50
100
70
100
200
140
200
3.0
100
1.3
10
250
400
280
400
RS3J
600
420
600
RS3K
800
560
800
UNIT
V
V
V
A
A
V
µA
µA
250
500
ns
pF
°C/W
°C/W
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical thermal resistance ( Junction to Ambient ) ( Note 3 )
Typical thermal resistance ( Junction to Lead ) ( Note 3 )
Operating Junction and StorageTemperature Range
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
( 3 ) On P.C.B with 0.3 x 0.3" (8.0 x 8.0 mm ) copper pad areas.
Page 1 of 2
Rev. 01 : September 30, 2005

RS3J Related Products

RS3J RS3A RS3D RS3B RS3K RS3G
Description 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 100 V, SILICON, RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
package instruction SMC, 2 PIN R-PDSO-C2 SMC, 2 PIN SMC, 2 PIN SMC, 2 PIN SMC, 2 PIN
Reach Compliance Code compli compli compli compli compli compli
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95 code DO-214AB DO-214AB DO-214AB DO-214AB DO-214AB DO-214AB
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current 100 A 100 A 100 A 100 A 100 A 100 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Guideline TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
Maximum repetitive peak reverse voltage 600 V 50 V 200 V 100 V 800 V 400 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.25 µs 0.15 µs 0.15 µs 0.15 µs 0.5 µs 0.15 µs
surface mount YES YES YES YES YES YES
Terminal form C BEND C BEND C BEND C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
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