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SZ5551

Description
SURFACE MOUNT SILICON ZENER DIODES
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

SZ5551 Overview

SURFACE MOUNT SILICON ZENER DIODES

SZ5551 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance45 Ω
Number of components1
Maximum power dissipation3 W
Nominal reference voltage51 V
surface mountYES
Maximum voltage tolerance5%
Working test current15 mA
Base Number Matches1
SZ553J - SZ55D0
V
Z
: 3.9 - 200 Volts
P
D
: 3 Watts
FEATURES :
* Complete Voltage Range 3.9 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
SURFACE MOUNT SILICON
ZENER DIODES
SMA (DO-214AC)
5.0
±
0.15
4.5
±
0.15
1.1
±
0.3
1.2
±
0.2
2.6
±
0.15
2.1
±
0.2
0.2
±
0.07
MECHANICAL DATA
* Case : SMA (DO-214AC) Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead formed for Surface mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.064 gram
2.0
±
0.2
Dimensions in millimeter
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at T
L
= 75
°C
(Note1)
Maximum Forward Voltage at I
F
= 200 mA
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
V
F
T
J
Ts
Value
3.0
1.5
- 55 to + 150
- 55 to + 150
Unit
W
V
°C
°C
Note :
(1) T
L
= Lead temperature at 5.0 mm
2
( 0.013 mm thick ) copper land areas.
Fig. 1 POWER TEMPERATURE DERATING CURVE
P
D
, MAXIMUM DISSIPATION
(WATTS)
3.75
3.00
2.25
1.50
0.75
0
0
25
50
75
100
125
150
175
5.0 mm
2
( 0.013 mm thick )
copper land areas.
T
L,
LEAD TEMPERATURE (
°
C)
Page 1 of 2
Rev. 02 : March 25, 2005
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