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DTC143ECA-TP

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size284KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
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DTC143ECA-TP Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

DTC143ECA-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionBipolar Transistors - Pre-Biased NPN 4.7KOhms 250MHz
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
DTC143ECA
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epitaxial Planar Die Construction
Complementary
PNP
Types Available
Built-In Biasing Resistors
Marking: 23
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Symbol
V
CC
I
C
V
IN
P
d
T
j
T
stg
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Parameter
Supply Voltage
Collector current
Input voltage
Power dissipation
Junction temperature
Storage temperature
Min
---
---
-10
---
---
-55
Typ
---
100
---
200
150
---
Max
50
---
+30
---
---
150
G
H
J
Digital Transistors
SOT-23
A
D
Absolute maximum ratings @ 25
Unit
V
mA
V
mW
3
1
2
C
B
1.IN
F
E
2.GND
3.OUT
Electrical Characteristics @ 25
Parameter
Input voltage (V
CC
=5V, I
O
=100 A)
(V
O
=0.3V, I
O
=20mA)
Output voltage (I
O
=10mA,I
i
=0.5mA)
Input current (V
I
=5V)
Output current (V
CC
=50V, V
I
=0)
DC current gain (V
O
=5V, I
O
=10mA)
Input resistance
Resistance ratio
Transition frequency
(V
CE
=10V, I
E
=5mA, f=100MHz)
Min
---
3.0
---
---
---
30
3.29
0.8
---
Typ
---
---
---
---
---
---
4.7
1
250
Max
0.5
---
0.3
1.8
0.5
---
6.11
1.2
---
Unit
V
V
V
mA
A
K
MHz
K
DIMENSIONS
INCHES
MIN
MAX
.110
.120
.083
.104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
DIM
A
B
C
D
E
F
G
H
J
K
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
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