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DTA123JE-TP-HF

Description
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size257KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

DTA123JE-TP-HF Overview

Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

DTA123JE-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionHALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 21
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
DTA123JE
Features
Absolute maximum ratings @ 25
Symbol
V
CC
V
IN
I
O
I
C(MAX)
P
d
T
j
T
stg
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making
device design easy
Halogen
free available upon request by adding suffix "-HF"
Min
---
-12
---
---
---
-55
Typ
-50
---
-100
-100
150
150
---
Max
---
5
---
---
---
150
Unit
V
V
mA
mW
PNP
Digital Transistors
SOT-523
A
D
3
1
B
2
C
1. IN
2. GND
3. OUT
E
Electrical Characteristics @ 25
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Parameter
Input voltage (V
CC
=-5V, I
O
=-100­A)
(V
O
=-0.3V, I
O
=-5mA)
Output voltage (I
O
/I
I
=-5mA/-0.25mA
Input current (V
I
=-5V)
Output current (V
CC
=-50V, V
I
=0)
DC current gain (V
O
=-5V, I
O
=-10mA)
Input resistance
Resistance ratio
Transition frequency
(V
CE
=-10V, I
E
=5mA, f=100MHz)
Min
---
-1.1
---
---
---
80
1.54
17
---
Typ
---
---
---
---
---
---
2.2
21
250
Max
-0.5
---
-0.3
-3.6
-0.5
---
2.86
26
---
Unit
V
V
V
mA
­A
MHz
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.059
.067
.030
.033
.057
.069
.020 Nominal
.035
.043
.000
.004
.028
.031
.004
.008
.010
.014
MM
MIN
MAX
1.50
1.70
0.75
0.85
1.45
1.75
0.50Nominal
0.90
1.10
.000
.100
.70
0.80
.100
.200
.25
.35
DIM
A
B
C
D
E
G
H
J
K
NOTE
*Marking: E32
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