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Quad SPST CMOS Analog Switches
DG201A/DG211
ABSOLUTE MAXIMUM RATINGS (DG211)
V+ to V-………………………………….............……………….44V
V
IN
to Ground…………………………..................…. ……...V-, V+
V
L
to Ground………....................……………………….-0.3V, 25V
V
S
or V
D
to V+……...........................………………………0, -40V
V
S
or V
D
to V-……………........................…………………..0, 40V
V+ to Ground…………………...................................………...25V
V- to Ground…………………………………….................…...-25V
Current, Any Terminal Except S or D……….............……...30mA
Continuous Current, S or D……………………..............…...20mA
Peak Current, S or D
(pulsed at 1ms 10% duty cycle max)…..........................70mA
Note 1:
Device mounted with all leads soldered to PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Storage Temperature Range……………..……..-65°C to +125°C
Operating Temperature Range
DG211C ................................……………...……...0°C to +70°C
DG211D/E .........................……………...……...-40°C to +85°C
or V- on Maxim’s DG201A will be clamped by internal diodes, and are also internally cur-
rent limited to 25mA.
Note 2:
Device mounted with all leads soldered to PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS (DG201A)
(V+ = +15V, V- = -15V, GND = 0,
T
A
= +25°C,
unless otherwise noted.) (For more information on TYP values see Note 3.)
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