Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | POST/STUD MOUNT, R-MUPM-X7 |
| Reach Compliance Code | unknown |
| Other features | LOW CONDUCTION LOSS |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 200 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Gate emitter threshold voltage maximum | 5.5 V |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-MUPM-X7 |
| Number of components | 2 |
| Number of terminals | 7 |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | POST/STUD MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 658 W |
| Maximum power dissipation(Abs) | 658 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
| VCEsat-Max | 2 V |
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