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VS-ST103S08PCK0

Description
Silicon Controlled Rectifier,
CategoryAnalog mixed-signal IC    Trigger device   
File Size1MB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

VS-ST103S08PCK0 Overview

Silicon Controlled Rectifier,

VS-ST103S08PCK0 Parametric

Parameter NameAttribute value
MakerVishay
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Trigger device typeSCR
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 105 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
TO-209AC (TO-94)
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
TO-209AC (TO-94)
Single SCR
105 A
400 V to 800 V
1.73 V
3000 A
3150 A
200 mA
200 mA
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
Range
TEST CONDITIONS
VALUES
105
T
C
85
165
3000
3150
45
41
400 to 800
10 to 25
-40 to 125
V
μs
°C
kA
2
s
A
UNITS
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-ST103S
08
800
900
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
30
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Mar-14
Document Number: 94365
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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