Pb Free Product
http://www.ncepower.com
NCE20G120T
NCE20G120T
1200V, 20A, Trench NPT IGBT
Features
Trench NPT( Non Punch Through) IGBT
High speed switching
Low saturation voltage: V
CE(sat)
=2.0V@I
C
=20A
High input impedance
Applications
Inductive heating, Microwave oven, Inverter, UPS, etc.
Soft switching applications
G
C E
C
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
G
E
Absolute Maximum Ratings
Symbol Description
V
CES
V
GES
I
C
I
CM
(1)
P
D
T
J
T
stg
T
L
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Ratings
1200
+/-25
@T
C
=25°C
@T
C
=100°C
@T
C
=25°C
@T
C
=100°C
40
20
60
298
119
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8" from
case for 5seconds
Operating Junction Temperature
共
8
页，第
1
页
Pb Free Product
http://www.ncepower.com
NCE20G120T
Typ.
-
-
Thermal Characteristics
Symbol Parameter
R
ƟJC
R
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
0.42
40
Units
°C/W
°C/W
Electrical Characteristics of the IGBT
T
C
=25°C
Symbol Parameter
Off Characteristics
BV
CES
I
CES
I
GES
V
GE(th)
Collector to Emitter
Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Test Conditions
Min.
Typ.
Max.
Units
V
GE
=0V, Ic=1mA
V
CE
=V
CES
, V
GE
=0V
V
GE
=V
GES
, V
CE
=0V
I
C
=20mA, V
CE
=V
GE
I
C
=20A, V
GE
=15V
T
C
=25°C
1200
-
-
4.0
-
-
-
-
-
-
-
-
2
2.15
3080
95
60
30
79
143
217
0.42
0.71
1.13
29
93
147
259
0.47
0.86
1.33
137
23
65
-
1
+/-250
7.0
2.5
-
-
-
-
-
-
-
320
-
1.05
-
-
-
-
-
-
-
-
-
-
-
V
mA
nA
V
V
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
On Characteristics
V
CE(sat)
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Collector to Emitter Saturation
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
I
C
=20A, V
GE
=15V
T
C
=125°C
Dynamic Characteristics
V
CE
=30V, V
GE
=0V,
f=1MHz
-
-
-
-
Switching Characteristics
V
CC
=600V,I
C
=20A,
R
G
=10Ώ,V
GE
=15V,
Resistive Load,
T
C
=25°C
-
-
-
-
-
-
-
V
CC
=600V,I
C
=20A,
R
G
=10Ώ,V
GE
=15V,
Resistive Load,
T
C
=125°C
V
CC
=600V,I
C
=20A,
V
GE
=15V
-
-
-
-
-
-
-
共
8
页，第
2
页
Pb Free Product
http://www.ncepower.com
NCE20G120T
Figure 2. Typical Saturation Voltage
Characteristics
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Collector Current, I
C
(A)
Collector Emitter Voltage, V
CE
(V)
Collector Current I
C,
(A)
Collector Emitter Voltage, V
CE
(V)
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector Emitter Voltage, I
C
(V)
Figure 4. Saturation Voltage vs. V
GE
Case temperature, Tc(°C)
Collector Emitter Voltage, I
C
(V)
Gate Emitter Voltage, V
GE
( V)
Figure 5. Saturation Voltage vs. V
GE
Collector Emitter Voltage, I
C
(V)
Figure 6. Capacitance Characteristics
Gate Emitter Voltage, V
GE
( V)
Capacitance (pF)
Collector Emitter Voltage, V
CE
(V)
共
8
页，第
3
页
Pb Free Product
http://www.ncepower.com
NCE20G120T
Figure 9. Turn-off Characteristics vs. Gate
Resistance
Typical Performance Characteristics
(Continued)
Figure 8. Turn-on Characteristics vs. Gate
Resistance
Switching Time (ns)
Switching Time (ns)
Gate Resistance, R
G
(Ω)
Gate Resistance, R
G
(Ω)
Figure 10. Switching Loss vs. Gate Resistance
Figure 11. Turn-on Characteristics vs. Collector
Current
Switching Loss (mJ)
Switching Loss (mJ)
Gate Resistance, R
G
(Ω)
Collector Current, I
C
(A)
Figure 12. Turn-Off Characteristics vs.
Collector Current
Figure 13. Switching Loss vs. Collector Current
Switching Loss (mJ)
Switching Loss (mJ)
Collector Current, I
C
(A)
Collector Current, I
C
(A)
共
8
页，第
4
页
Pb Free Product
http://www.ncepower.com
NCE20G120T
Figure 15. SOA Characteristics
Typical Performance Characteristics
(Continued)
Figure14. Gate Charge Characteristics
Gate-Emitter Voltage (V)
Gate Charge, Qg (nC)
Collector Current, I
C
(A)
Collector Emitter Voltage, (V)
Figure 16. Turn-Off SOA
Collector Current, I
C
(A)
Collector Emitter Voltage, (V)
Figure 17. Transient Thermal Impedance of IGBT
共
8
页，第
5
页
京公网安备 11010802033920号
EEWORLD
