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BYX65-50R

Description
30A, 50V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BYX65-50R Overview

30A, 50V, SILICON, RECTIFIER DIODE

BYX65-50R Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
applicationVERY FAST RECOVERY
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current30 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum power dissipation50 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse current10000 µA
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER

BYX65-50R Related Products

BYX65-50R BYX65-200R BYX65-100R BYX65-300R BYX65-400R
Description 30A, 50V, SILICON, RECTIFIER DIODE 30A, 200V, SILICON, RECTIFIER DIODE 30A, 100V, SILICON, RECTIFIER DIODE 30A, 300V, SILICON, RECTIFIER DIODE 30A, 400V, SILICON, RECTIFIER DIODE
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C
application VERY FAST RECOVERY VERY FAST RECOVERY VERY FAST RECOVERY VERY FAST RECOVERY VERY FAST RECOVERY
Shell connection ANODE ANODE ANODE ANODE ANODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A 300 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 30 A 30 A 30 A 30 A 30 A
Package body material METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Maximum power dissipation 50 W 50 W 50 W 50 W 50 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V 200 V 100 V 300 V 400 V
Maximum reverse current 10000 µA 10000 µA 10000 µA 10000 µA 10000 µA
Maximum reverse recovery time 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs
surface mount NO NO NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER UPPER
Maker STMicroelectronics - - STMicroelectronics STMicroelectronics
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