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NS11032

Description
Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, 0.060 INCH, TO-204AE, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size72KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

NS11032 Overview

Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, 0.060 INCH, TO-204AE, 2 PIN

NS11032 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeBFM
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)50 A
Collector-emitter maximum voltage120 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)400
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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