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Datasheet> All Categories > Discrete semiconductor> diode> ZMV830A
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ZMV830A

Description
Variable Capacitance Diode, 10pF C(T), 25V, Silicon,
CategoryDiscrete semiconductor    diode   
File Size31KB，2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZMV830A Overview

Variable Capacitance Diode, 10pF C(T), 25V, Silicon,

ZMV830A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage25 V
ConfigurationSINGLE
Minimum diode capacitance ratio4.5
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor300
Maximum repetitive peak reverse voltage25 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40

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SOD323 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 1 – NOVEMBER 1998
FEATURES
* Close Tolerance C-V Characteristics
* High Tuning Ratio
* Low I
R
Enabling Excellent Phase Noise Performance
(I
R
Typically <200pA at 25V)
* Miniature surface mount package
ZMV829/A/B
to
ZMV835/A/B
1
C
A
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Forward Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
I
F
P
tot
T
j
:T
stg
MAX
200
330
SOD323
UNIT
mA
mW
°C
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
=25°C)
PARAMETER
Reverse Breakdown
Voltage
Reverse Voltage Leakage
Temperature Coefficient
of Capacitance
SYMBOL MIN
V
BR
I
R
η
25
0.2
300
20
400
TYP
MAX
UNIT CONDITIONS
V
nA
I
R
=10µA
V
R
=20V
ppm/°C V
R
=3V, f=1MHz
TUNING CHARACTERISTICS (at T
amb
=25°C)
PART NO
Nominal Capacitance (pF)
V
R
=2V, f=1MHz
MIN
ZMV829A
ZMV830A
ZMV831A
ZMV832A
ZMV833A
ZMV834A
ZMV835A
7.38
9.0
13.5
19.8
29.7
42.3
61.2
NOM
8.2
10.0
15.0
22.0
33.0
47.0
68.0
MAX
9.02
11.0
16.5
24.2
36.3
51.7
74.8
Minimum
Q
@ V
R
=3V
f=50MHz
250
300
300
200
200
200
100
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN
4.3
4.5
4.5
5.0
5.0
5.0
5.0
MAX
5.8
6.0
6.0
6.5
6.5
6.5
6.5
Note:
No suffix
±20%
(e.g. ZMV830), suffix B
±
5% (e.g. ZMV830B)
Spice parameter data is available upon request for these devices

ZMV830A Related Products

ZMV830A ZMV829A ZMV833 ZMV834A ZMV830B ZMV830 ZMV831 ZMV831A ZMV835
Description Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Variable Capacitance Diode, 33pF C(T), 25V, Silicon, Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Variable Capacitance Diode, 15pF C(T), 25V, Silicon, Variable Capacitance Diode, 15pF C(T), 25V, Silicon, Variable Capacitance Diode, 68pF C(T), 25V, Silicon,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum diode capacitance ratio 4.5 4.3 5 5 4.5 4.5 4.5 4.5 5
Nominal diode capacitance 10 pF 8.2 pF 33 pF 47 pF 10 pF 10 pF 15 pF 15 pF 68 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 code R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1 1 1 1
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260 260
Maximum power dissipation 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W 0.33 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
minimum quality factor 300 250 200 200 300 300 300 300 100
Maximum repetitive peak reverse voltage 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V
surface mount YES YES YES YES YES YES YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40 40 40 40 40 40
Maker Zetex Semiconductors - Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
Diode Capacitance Tolerance - - 20% - 5% 20% 20% - 20%

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