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ZMV830B

Description
Variable Capacitance Diode, 10pF C(T), 25V, Silicon
CategoryDiscrete semiconductor    diode   
File Size44KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance
Download Datasheet Parametric View All

ZMV830B Overview

Variable Capacitance Diode, 10pF C(T), 25V, Silicon

ZMV830B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes
package instructionR-PDSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio4.5
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor300
Maximum repetitive peak reverse voltage25 V
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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