S504TX/S504TXR/S504TXRW
Vishay Telefunken
MOSMIC
®
for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC
-
MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
AGC
C block
RF in
RG1
13650
C block
G2
G1
S
D
RFC
V
DD
(V
DS
)
RF out
C block
V
GG
(V
RG1
)
Features
D
Easy Gate 1 switch-off with PNP switching
transistors inside PLL
D
High gain, medium forward transadmittance
(24 mS typ.)
D
High AGC-range with less steep slope
D
Integrated gate protection diodes
D
Low noise figure
2
1
D
Improved cross modulation at gain reduction
D
SMD package
1
2
3
4
13628
4
3
13629
S504TX Marking: X04
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S504TXR Marking: X6R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
4
3
13633
S504TXRW Marking: WX6
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85079
Rev. 1, 05-Jun-01
www.vishay.com
1 (5)
S504TX/S504TXR/S504TXRW
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1 - source voltage
g
Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Symbol
V
DS
I
D
±I
G1/G2SM
+V
G1S
-V
G1S
±V
G2SM
P
tot
T
Ch
T
stg
Value
8
25
10
6
1.5
6
200
150
–55 to +150
Unit
V
mA
mA
V
V
V
mW
°
C
°
C
T
amb
≤
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
Test Conditions
I
D
= 10
m
A, V
G1S
= V
G2S
= 0
±I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±I
G2S
= 10 mA, V
G1S
= V
DS
= 0
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
±V
G2S
= 5 V, V
G1S
= V
DS
= 0
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
W
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 20
m
A
V
DS
= V
RG1
= 5 V, R
G1
= 56 k
W
, I
D
= 20
m
A
Symbol
V
(BR)DSS
±V
(BR)G1SS
±V
(BR)G2SS
+I
G1SS
±I
G2SS
I
DSO
V
G1S(OFF)
V
G2S(OFF)
8
0.5
0.8
1.0
13
Min
12
7
7
Typ
Max Unit
V
10
10
20
20
18
1.3
1.4
V
V
nA
nA
mA
V
V
Remark on driving the MOSMIC and improving intermodulation behavior:
By setting R
G1
smaller than 56 k
W
, typical value of I
DSO
will raise and improved intermodulation behavior will
be performed.
www.vishay.com
2 (5)
Document Number 85079
Rev. 1, 05-Jun-01
S504TX/S504TXR/S504TXRW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85079
Rev. 1, 05-Jun-01
www.vishay.com
5 (5)
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