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DL4148

Description
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size288KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

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DL4148 Overview

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, MINIMELF-2

DL4148 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeMELF
package instructionMINIMELF-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LELF-R2
JESD-609 codee0
Maximum non-repetitive peak forward current0.5 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
NOT RECOMMENDED FOR NEW DESIGNS
USE
1N4148W-TP
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
DL4148
Features
Low Current Leakage,Low Cost
Compression Bond Construction
Surface Mount Applications
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
500mW High Speed
Switching Diode
100 Volt
MiniMELF
Cathode Ma
Maximum Ratings
Operating Temperature: -65℃ to +175℃
Storage Temperature: -65
to +175℃
Maximum Thermal Resistance: 500K/W Junction To Ambient
Tested on PC Board 50mm
×
50mm
×
1.6mm
Electrical Characteristics @ 25℃ Unless Otherwise Specified
Reverse Voltage
Breakdown Voltage
Average Forward
Current
Power Dissipation
Junction
Temperature
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Junction
Capacitance
Maximum Reverse
Recovery Time
V
R
V
BR
I
O
P
TOT
T
J
I
FSM
75V
100V
150mA
500mW
175°C
2.0A
t
p
= 1.0μs
DIM
A
B
C
INCHES
MIN
.130
.008
.055
DIMENSIONS
MM
MIN
3.30
.20
1.40
C
I
R
=100
μA
B
A
V
F
1.0V
I
FM
= 10mA
MAX
.146
.016
.059
MAX
3.70
.40
1.50
NOTE
I
R
25nA
5.0μA
50µA
4.0pF
4.0ns
V
R
=20V; T
J
= 25℃
V
R
=75V; T
J
= 25℃
V
R
=20V; T
J
=150℃
Measured at
1.0MHz, V
R
=0V
I
F
=10mA; V
R
= 6V
R
L
=100Ω
SUGGESTED SOLDER
PAD LAYOUT
.165
C
J
T
rr
.075
Note:1.Lead in Glass Exemption Applied, see EU Directive Annex 7(c)-I.
.030
Revision: B
www.mccsemi.com
1 of 4
2012/08/22

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