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DMMT3906-T

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size95KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

DMMT3906-T Overview

Transistor

DMMT3906-T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
package instruction,
Reach Compliance Codeunknown
JESD-609 codee0
Humidity sensitivity level1
Terminal surfaceTin/Lead (Sn/Pb)
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
DMMT3906
Features
Epitaxial Planar Die Construction
Ultra-small surface mount package
Available in RoHs compliant version
Case Material: Molded Plastic.
Classification Rating 94V-0
Marking:K3Q
UL Flammability
PNP
Small Signal
Transistors
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
R
THJA
T
J
T
STG
Symbol
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
(1)
(1)
Power dissipation
Thermal Resistance
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-10uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=-10uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CE
=-30Vdc, V
EB(OFF)
=-3.0Vdc)
Emitter-Base Cutoff Current
(V
CE
=-30Vdc, V
EB(OFF)
=-3.0Vdc)
Rating
-40
-40
-5.0
-200
200
625
-55 to +150
-55 to +150
Min
-40
-40
-5.0
---
---
Max
---
---
---
-50
-50
Unit
V
V
V
mA
mW
O
C/W
O
C
O
C
Units
Vdc
Vdc
Vdc
G
SOT-363
C
2
E
2
E
1
B
C
B
2
B
1
C
1
A
H
M
J
F
D
L
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
K
OFF CHARACTERISTICS
(2)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
DIMENSIONS
nAdc
nAdc
DIM
A
B
C
D
F
H
J
K
L
M
INCHES
MIN
.004
.045
.079
.026
.012
.071
---
.035
.010
.004
.016
.087
.004
.039
.016
.016
MAX
.012
.053
.087
ON CHARACTERISTICS
(2)
DC Current Gain
---
60
(I
C
=-100uAdc, V
CE
=-1.0Vdc)
80
---
(I
C
=-1.0mAdc, V
CE
=-1.0Vdc)
100
300
(I
C
=-10mAdc, V
CE
=-1.0Vdc)
60
---
(I
C
=-50mAdc, V
CE
=-1.0Vdc)
---
30
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
---
-0.25
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
-0.40
V
BE(sat)
Base-Emitter Saturation Voltage
-0.65
-0.85
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
---
-0.95
Note: 1. Valid provided that terminals are kept at ambient temperature.
h
FE
---
MM
MIN
MAX
0.10
0.30
1.15
1.35
2.00
2.20
0.65Nominal
0.30
0.40
1.80
2.20
---
0.10
0.90
1.00
0.25
0.40
0.10
0.25
NOTE
Vdc
Vdc
www.mccsemi.com
Revision: 3
1 of 4
2007/04/09
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