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1N5406

Description
Rectifier Diode, 1 Element, 3A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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1N5406 Overview

Rectifier Diode, 1 Element, 3A, 600V V(RRM),

1N5406 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current200 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage600 V
surface mountNO
BL
FEATURES
Low cost
GALAXY ELECTRICAL
1N5400 - - - 1N5408
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
PLASTIC SILICON RECTIFIER
DO - 27
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L
recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
1N
1N
1N
1N
1N
1N
1N
1N
5400 5401 5402 5403 5404 5405 5406 5407 5408
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
3.0
500
350
500
600
420
600
800
560
800
1000
700
1000
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
200.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.0
10.0
100.0
35
20
- 55 ---- + 150
- 55 ---- + 150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0260009
BL
GALAXY ELECTRICAL
1.

1N5406 Related Products

1N5406 1N5405
Description Rectifier Diode, 1 Element, 3A, 600V V(RRM), Rectifier Diode, 1 Element, 3A, 500V V(RRM),
Is it Rohs certified? conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknow
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
Maximum non-repetitive peak forward current 200 A 200 A
Number of components 1 1
Maximum operating temperature 150 °C 150 °C
Maximum output current 3 A 3 A
Maximum repetitive peak reverse voltage 600 V 500 V
surface mount NO NO
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