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BAS21AHT1G_10

Description
250 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size46KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAS21AHT1G_10 Overview

250 V, SILICON, SIGNAL DIODE

BAS21AHT1G_10 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, 塑料, CASE 477-02, 2 PIN
Lead-freeYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage250 V
BAS21AHT1G
Low Leakage
Switching Diode
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Symbol
V
R
V
RRM
I
F
I
FM(surge)
Rating
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Value
250
250
200
625
Unit
Vdc
Vdc
mAdc
mAdc
2
Max
200
1.57
635
−55 to +150
Unit
mW
mW/°C
°C/W
°C
AA
M
G
= Device Code
= Date Code*
= Pb−Free Package
1
CATHODE
2
ANODE
http://onsemi.com
LOW LEAKAGE
SWITCHING DIODE
THERMAL CHARACTERISTICS
Symbol
P
D
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Range
1
SOD−323
CASE 477
STYLE 1
MARKING
DIAGRAM
AA M
G
G
R
qJA
T
J
, T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
BAS21AHT1G
Package
SOD−323
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
NSVBAS21AHT1G SOD−323
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 2
Publication Order Number:
BAS21AHT1/D

BAS21AHT1G_10 Related Products

BAS21AHT1G_10 BAS21AHT1 BAS21AHT1D
Description 250 V, SILICON, SIGNAL DIODE 250 V, SILICON, SIGNAL DIODE 250 V, SILICON, SIGNAL DIODE
Number of terminals 2 2 2
Number of components 1 1 1
Processing package description HALOGEN FREE AND ROHS COMPLIANT, 塑料, CASE 477-02, 2 PIN HALOGEN FREE AND ROHS COMPLIANT, 塑料, CASE 477-02, 2 PIN HALOGEN FREE AND ROHS COMPLIANT, 塑料, CASE 477-02, 2 PIN
Lead-free Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
terminal coating tin tin tin
Terminal location pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single
Diode component materials silicon silicon silicon
Maximum power consumption limit 0.2000 W 0.2000 W 0.2000 W
Diode type Signal diode Signal diode Signal diode
Maximum reverse recovery time 0.0500 us 0.0500 us 0.0500 us
Maximum repetitive peak reverse voltage 250 V 250 V 250 V

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