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BAT42

Description
0.2 A, SILICON, SIGNAL DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size44KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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BAT42 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

BAT42 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.65 V
Maximum non-repetitive peak forward current0.75 A
Number of components1
Maximum operating temperature125 °C
Maximum output current0.1 A
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Maximum time at peak reflow temperatureNOT SPECIFIED
Certificate TH97/10561QM
Certificate TW00/17276EM
BAT42 - BAT43
FEATURES :
• For general purpose applications.
• These diodes feature very low turn-on voltage and fast
switching. These devices are protected by a PN junction
guard ring against excessive voltage, such as electro-static
discharges
• These diodes are also available in the MiniMELF case
with the type designations LL42 to LL43.
• Pb / RoHS Free
SCHOTTKY BARRIER DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at 25
°
C ambient temperature unless otherwise specified.)
Parameter
Repetitive Peak Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current at tp < 1s,
Forward Surge Current at tp < 10 ms,
Power Dissipation ,Ta = 65
°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ambient Operating Temperature Range
Storage temperature range
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
D
R
θ
JA
T
J
Ta
T
S
Value
30
200
(1)
500
(1)
4
(1)
Unit
V
mA
mA
A
mW
°C/W
°C
°C
°C
200
(1)
300
125
(1)
-65 to + 125
-65 to + 150
Note:
(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Reverse Current
Pulse Test tp <300μs ,
δ
<2%
Forward Voltage
Pulse Test tp <300μs ,
δ
<2%
(T
J
= 25°C unless otherwise noted)
Symbol
V
(BR)R
I
R
BAT42 , 43
BAT42
BAT42
BAT43
BAT43
Test Condition
I
R
= 100
μA
(pulsed)
V
R
= 25 V
V
R
= 25 V , T
J
= 100°C
I
F
= 200mA
I
F
= 10mA
I
F
= 50mA
I
F
= 2mA
I
F
= 15mA
V
R
= 1V, f = 1MHz
I
F
= 10mA, I
R
= 10mA ,
Irr = 1mA, R
L
= 100Ω
Min
30
-
-
-
-
-
0.26
-
-
-
Typ
-
-
-
-
-
-
-
-
7
-
Max
-
0.5
100
1.00
0.40
0.65
0.33
0.45
-
5
Unit
V
μA
V
F
V
Diode Capacitance
Reverse Recovery Time
Cd
Trr
pF
ns
Page 1 of 2
Rev. 03 : May 8, 2006

BAT42 Related Products

BAT42 BAT43
Description 0.2 A, SILICON, SIGNAL DIODE, DO-35 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-204AH
Is it Rohs certified? conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.65 V 1 V
Maximum non-repetitive peak forward current 0.75 A 0.75 A
Number of components 1 1
Maximum operating temperature 125 °C 125 °C
Maximum output current 0.1 A 0.1 A
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 30 V 30 V
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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