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BAT54CXV3D

Description
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size51KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

BAT54CXV3D Overview

0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAT54CXV3D Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 463C-03, SC-89, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2400 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A
BAT54CXV3
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
www.onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Non−Repetitive Peak Forward
Current, t
p
< 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%
Junction Temperature
Storage Temperature Range
Thermal Resistance,
Junction−to−Ambient (Note 1)
Symbol
V
R
P
F
240
1.9
I
F
I
FSM
I
FRM
200 Max
600
300
mW
mW/°C
mA
mA
mA
Value
30
Unit
V
30 VOLT
DUAL COMMON CATHODE
SCHOTTKY BARRIER DIODES
3
1
2
SC−89
CASE 463C
STYLE 3
1
ANODE
3
CATHODE
2
ANODE
MARKING DIAGRAM
T
J
T
stg
R
qJA
−55 to 125
−55 to +150
525
°C
°C
°C/W
1
5CM
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 board with minimum mounting pad.
5C
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BAT54CXV3T1G
Package
SC−89
(Pb−Free)
Shipping
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 3
Publication Order Number:
BAT54CXV3/D

BAT54CXV3D Related Products

BAT54CXV3D BAT54CXV3
Description 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3
Number of components 2 2
Processing package description HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 463C-03, SC-89, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 463C-03, SC-89, 3 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form FLAT FLAT
terminal coating MATTE Tin MATTE Tin
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY
structure COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials silicon silicon
Maximum power consumption limit 0.2400 W 0.2400 W
Diode type Signal diode Signal diode
Maximum reverse recovery time 0.0050 us 0.0050 us
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum average forward current 0.2000 A 0.2000 A
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