BAW75 ~ BAW76
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 25V , 50V
• Peak reverse voltage:max. 35V, 75 V
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Peak Reverse Voltage
BAW75
BAW76
Maximum Reverse Voltage
Maximum Average Forward Current
Half Wave Recitication with Resistive Load , f
≥
50Hz
Maximum Power Dissipation
Maximum Surge Forward Current at t < 1µs , Tj = 25
°C
Maximum Junction Temperature
Storage Temperature Range
BAW75
BAW76
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RM
Value
25
50
35
75
150
(1)
500
(1)
2
200
-65 to + 200
Unit
V
V
RM
V
I
F(AV)
P
D
I
FSM
T
J
T
S
mA
mW
A
°C
°C
Note :
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
Forward Voltage
BAW75
BAW76
BAW75
BAW76
BAW75
BAW76
BAW75
BAW76
Symbol
I
R
V
F
V
(BR)R
Cd
Trr
Test Condition
V
R
= 25 V
V
R
= 50 V
I
F
= 30 mA
I
F
= 100 mA
Test with 5µA pulses
f = 1MHz ; V
R
= 0
I
F
= 10 mA , I
R
= 10 mA
Irr = 1mA
Min
-
-
-
-
35
75
-
-
-
Typ
-
-
-
-
-
-
-
-
-
Max
100
100
1.0
1.0
-
-
4.0
2.0
4
Unit
nA
V
V
pF
ns
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( BAW75 ~ BAW76 )
FIG. 1 ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG. 2 TYPICAL FORWARD VOLTAGE
500
1000
POWER DISSIPATION, P
D
(mW)
Forward Current , I
F
(mA)
400
100
300
10
T
J
= 25
°
C
1
200
100
0
0
100
200
0.1
0
0.4
0.8
1.2
1.4
1.6
Ambient Temperature , Ta (°C)
Forward Voltage , V
F
(V)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERESE CURRENT
VERSUS JUNCTION TEMPERATURE
1.2
10
5
1.0
Diode Capacitance , Cd (pF)
0.9
0.8
Reverse Current , I
R
(nA)
10
4
10
3
0.7
f = 1MHz;
T
J
= 25
°
C
10
2
0.6
0.5
10
0.4
0
10
20
1
0
100
200
Reverse Voltage , V
R
(V)
Junction Temperature , Ta (°C)
Page 2 of 2
Rev. 02 : March 25, 2005
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