BCW33LT1
General Purpose Transistor
NPN Silicon
Features
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
32
32
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
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COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2),
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
1
Max
Unit
3
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
556
mW
mW/°C
°C/W
2
SOT−23
(TO−236AB)
CASE 318
PLASTIC
MARKING DIAGRAM
mW
mW/°C
°C/W
°C
D3
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
D3 M
G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
BCW33LT1
BCW33LT1G
BCW33LT3
BCW33LT3G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 3
Publication Order Number:
BCW33LT1/D
BCW33LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mAdc,
I
B
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 32 Vdc, I
E
= 0)
(V
CB
= 32 Vdc, I
E
= 0, T
A
= 100°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
Base −Emitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
obo
NF
−
−
4.0
10
pF
dB
hFE
420
V
CE(sat)
−
V
BE(on)
0.55
0.70
0.25
Vdc
800
Vdc
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
−
−
100
10
nAdc
mAdc
32
32
5.0
−
−
−
Vdc
Vdc
Vdc
Symbol
Min
Max
Unit
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
300 ns
DUTY CYCLE = 2%
+10.9 V
10 k
275
10 < t
1
< 500
ms
DUTY CYCLE = 2%
0
t
1
+3.0 V
+10.9 V
10 k
C
S
< 4.0 pF*
275
−0.5 V
<1.0 ns
C
S
< 4.0 pF*
−9.1 V
< 1.0 ns
1N916
*Total shunt capacitance of test jig and connectors
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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BCW33LT1
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
20
I
C
= 1.0 mA
e n, NOISE VOLTAGE (nV)
300
mA
BANDWIDTH = 1.0 Hz
R
S
= 0
In, NOISE CURRENT (pA)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
2.0
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
0.1
10
20
50
30
mA
10
mA
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
I
C
= 1.0 mA
300
mA
100
mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
10
7.0
5.0
10
mA
3.0
100
mA
30
mA
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500 k
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
2.0 dB
3.0 dB 4.0 dB
6.0 dB
10 dB
BANDWIDTH = 1.0 Hz
1M
500 k
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700
1k
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700
1k
Figure 5. Narrow Band, 100 Hz
500 k
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
10
20
30
50 70 100
200 300
500 700
1k
Figure 6. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
Noise Figure is defined as:
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
−23
j/°K)
T = Temperature of the Source Resistance (°K)
R
S
= Source Resistance (Ohms)
NF
+
20 log10
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Wideband
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3
BCW33LT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
IC, COLLECTOR CURRENT (mA)
0.8
I
C
= 1.0 mA
10 mA
50 mA
BCW33LT1
T
J
= 25°C
100
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
I
B
= 500
mA
400
mA
300
mA
200
mA
0.6
100 mA
60
0.4
40
100
mA
20
0
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 8. Collector Saturation Region
Figure 9. Collector Characteristics
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
T
J
= 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
0.8
*APPLIES for I
C
/I
B
≤
h
FE
/2
25°C to 125°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
0
*q
VC
for V
CE(sat)
− 55°C to 25°C
−0.8
25°C to 125°C
−1.6
q
VB
for V
BE
0.2
− 55°C to 25°C
50
100
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0.5 1.0 2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
−2.4
0.1
0.5
1.0 2.0
5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
2.0
t
d
@ V
BE(off)
= 0.5 Vdc
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
1000
700
500
300
200
t, TIME (ns)
100
70
50
30
20
10
1.0
t
f
t
s
t, TIME (ns)
V
CC
= 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
2.0
20 30
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
50
70 100
20 30
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
50 70
100
Figure 12. Turn−On Time
Figure 13. Turn−Off Time
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BCW33LT1
TYPICAL DYNAMIC CHARACTERISTICS
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
500
T
J
= 25°C
f = 100 MHz
300
200
C, CAPACITANCE (pF)
V
CE
= 20 V
5.0 V
10
7.0
5.0
C
ib
C
ob
T
J
= 25°C
f = 1.0 MHz
3.0
2.0
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 14. Current−Gain — Bandwidth Product
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
Figure 15. Capacitance
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200
P
(pk)
t
1
t
2
FIGURE 19A
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−569)
Z
qJA(t)
= r(t)
w
R
qJA
T
J(pk)
− T
A
= P
(pk)
Z
qJA(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.01 0.02
500 1.0 k 2.0 k
5.0 k 10 k 20 k 50 k 100 k
Figure 16. Thermal Response
10
4
V
CC
= 30 Vdc
IC, COLLECTOR CURRENT (nA)
10
3
10
2
10
1
10
0
10
−1
10
−2
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 Vdc
I
CEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 16A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 16 was calculated for various duty cycles.
To find Z
qJA(t)
, multiply the value obtained from Figure 16 by the
steady state value R
qJA
.
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
DT
= r(t) x P
(pk)
x R
qJA
= 0.22 x 2.0 x 200 = 88°C.
For more information, see AN−569.
−4
0
−2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 16A.
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