BCW65ALT1G,
BCW65CLT1G
General Purpose Transistor
NPN Silicon
Features
www.onsemi.com
COLLECTOR
3
1
BASE
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
32
60
5.0
800
Unit
Vdc
Vdc
Vdc
1
3
2
EMITTER
mAdc
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
Ex
°C/W
°C
556
Unit
mW
mW/°C
°C/W
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
Ex M
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
= Device Code
x = A or C
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BCW65ALT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000/Tape & Reel
BCW65CLT1G
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
November, 2016 − Rev. 6
Publication Order Number:
BCW65ALT1/D
BCW65ALT1G, BCW65CLT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector −Emitter Breakdown Voltage
(I
C
= 10
mAdc,
V
EB
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 32 Vdc, I
E
= 0)
(V
CE
= 32 Vdc, I
E
= 0, T
A
= 150°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100
mAdc,
V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
DC Current Gain
(I
C
= 100
mAdc,
V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn−On Time
(I
B1
= I
B2
= 15 mAdc)
Turn−Off Time
(I
C
= 150 mAdc, R
L
= 150
W)
t
on
t
off
−
−
−
−
100
400
ns
ns
f
T
C
obo
C
ibo
NF
100
−
−
−
−
−
−
−
−
12
80
10
MHz
pF
pF
dB
BCW65ALT1
h
FE
35
75
100
35
BCW65CLT1
h
FE
80
180
250
100
V
CE(sat)
−
−
V
BE(sat)
−
−
2.0
0.7
0.3
−
−
Vdc
−
−
−
−
−
−
630
−
Vdc
−
−
−
−
−
−
250
−
−
−
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
−
−
I
EBO
−
−
−
−
20
20
20
nAdc
mAdc
nAdc
32
60
5.0
−
−
−
−
−
−
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BCW65ALT1G, BCW65CLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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