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2N5401J05Z

Description
600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size506KB,14 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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2N5401J05Z Overview

600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN

2N5401J05Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionTO-92, 3 PIN
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Humidity sensitivity levelNOT APPLICABLE
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.63 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
2N5401 / MMBT5401
2N5401
MMBT5401
C
E
C
B
TO-92
E
SOT-23
Mark: 2L
B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
150
160
5.0
600
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5401
625
5.0
83.3
200
Max
*MMBT5401
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5401/MMBT5401, Rev A

2N5401J05Z Related Products

2N5401J05Z 2N5401J18Z 2N5401RA MMBT5401D87Z
Description 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-3, BIP General Purpose Small Signal
package instruction TO-92, 3 PIN CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Reach Compliance Code compli unknow compli unknown
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A 0.6 A
Collector-emitter maximum voltage 150 V 150 V 150 V 150 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50 50
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND RECTANGULAR
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO YES
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location BOTTOM BOTTOM BOTTOM DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
Parts packaging code TO-92 TO-92 TO-92 -
JEDEC-95 code TO-92 TO-92 TO-92 -
Base Number Matches 1 1 1 -
ECCN code - EAR99 EAR99 EAR99
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