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BR2508W

Description
SILICON BRIDGE RECTIFIERS
CategoryDiscrete semiconductor    diode   
File Size42KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BR2508W Overview

SILICON BRIDGE RECTIFIERS

BR2508W Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionS-PUFM-W4
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeS-PUFM-W4
Maximum non-repetitive peak forward current300 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current25 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineTS 16949
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formWIRE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
BR2500W - BR2510W
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength
SILICON BRIDGE RECTIFIERS
BR50W
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
0.042 (1.06)
0.038 (0.96)
1.2 (30.5)
MIN.
0.310 (7.87)
0.280(7.11)
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at 12.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
BR
BR
BR
BR
BR
BR
BR
2500W 2501W 2502W 2504W 2506W 2508W 2510W
50
35
50
100
70
100
200
140
200
400
280
400
25
300
375
1.1
10
1.0
2
22
- 40 to + 150
- 40 to + 150
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
A
2
S
V
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
R
θ
JA
T
J
T
STG
µA
mA
°C/W
°C/W
°C
°C
Typical Thermal Resistance at Junction to Case ( Note 1 )
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1 ) Thermal resistance from Junction to Case with units mounted on a 5" x 4" x 3" ( 12.7 x 10.2 x 7.3 cm ) Al.-wing plate.
Page 1 of 2
Rev. 02 : March 24, 2005

BR2508W Related Products

BR2508W BR2500W_05 BR2501W BR2502W BR2500W BR2504W BR2506W BR2510W
Description SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS
Is it lead-free? Lead free - Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to - conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
package instruction S-PUFM-W4 - S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
Reach Compliance Code compli - compliant compliant compliant compliant compli compli
Other features HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Minimum breakdown voltage 800 V - 100 V 200 V 50 V 400 V 600 V 1000 V
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON - SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V - 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code S-PUFM-W4 - S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
Maximum non-repetitive peak forward current 300 A - 300 A 300 A 300 A 300 A 300 A 300 A
Number of components 4 - 4 4 4 4 4 4
Phase 1 - 1 1 1 1 1 1
Number of terminals 4 - 4 4 4 4 4 4
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Maximum output current 25 A - 25 A 25 A 25 A 25 A 25 A 25 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE - SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Guideline TS 16949 - TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
Maximum repetitive peak reverse voltage 800 V - 100 V 200 V 50 V 400 V 600 V 1000 V
surface mount NO - NO NO NO NO NO NO
Terminal form WIRE - WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location UPPER - UPPER UPPER UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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