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BTA30-600CW3G

Description
600 V, 30 A, SNUBBERLESS TRIAC, TO-220AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size101KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BTA30-600CW3G Overview

600 V, 30 A, SNUBBERLESS TRIAC, TO-220AB

BTA30-600CW3G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionLEAD FREE, CASE 221A-07, 3 PIN
Contacts3
Manufacturer packaging code221A-07
Reach Compliance Code_compli
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionISOLATED
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current35 mA
Maximum DC gate trigger voltage1.3 V
Maximum holding current50 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum leakage current0.005 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current30 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSNUBBERLESS TRIAC
BTA30-600CW3G,
BTA30-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
http://onsemi.com
Blocking Voltage to 800 Volts
On-State Current Rating of 30 Amperes RMS at 95°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt
500 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
Internally Isolated
High Commutating dI/dt
4.0 A/ms minimum at 125°C
Internally Isolated (2500 V
RMS
)
These are Pb−Free Devices
Rating
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
I
TSM
30
400
A
A
Value
Unit
V
1
2
3
TRIACS
30 AMPERES RMS
600 thru 800 VOLTS
MT2
G
4
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
−40
to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA30−600CW3G
BTA30−800CW3G
On-State RMS Current (Full Cycle Sine
Wave, 60 Hz, T
C
= 95°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J(initial)
= 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (T
J
= 25°C, t = 8.3 ms)
Peak Gate Current (T
J
= 125°C, t
20
ms)
Average Gate Power (T
J
= 125°C)
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
(t = 300 ms, R.H.
30%, T
A
= 25°C)
BTA30−xCWG
AYWW
TO−220AB
CASE 221A
STYLE 12
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
x
A
Y
WW
G
I
2
t
V
DSM/
V
RSM
I
GM
P
G(AV)
T
J
T
stg
V
iso
667
V
DRM
/V
RRM
+100
4.0
0.5
−40
to +125
−40
to +150
2500
A
2
sec
V
A
W
°C
°C
V
1
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
No Connection
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
BTA30−600CW3G
BTA30−800CW3G
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
Rev. 1
1
Publication Order Number:
BTA30−600CW3/D

BTA30-600CW3G Related Products

BTA30-600CW3G BTA30-600CW3G_10 BTA30-800CW3G
Description 600 V, 30 A, SNUBBERLESS TRIAC, TO-220AB 600 V, 30 A, SNUBBERLESS TRIAC, TO-220AB 800 V, 30 A, SNUBBERLESS TRIAC, TO-220AB
Shell connection ISOLATED ISOLATED ISOLATED
Number of components 1 1 1
Number of terminals 3 3 3
Off-state repetitive peak voltage 600 V 600 V 800 V
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Brand Name ON Semiconduc - ON Semiconduc
Is it lead-free? Lead free - Lead free
Is it Rohs certified? conform to - conform to
Maker ON Semiconductor - ON Semiconductor
Parts packaging code TO-220AB - TO-220AB
package instruction LEAD FREE, CASE 221A-07, 3 PIN - LEAD FREE, CASE 221A-07, 3 PIN
Contacts 3 - 3
Manufacturer packaging code 221A-07 - 221A-07
Reach Compliance Code _compli - _compli
ECCN code EAR99 - EAR99
Factory Lead Time 1 week - 1 week
Configuration SINGLE - SINGLE
Critical rise rate of minimum off-state voltage 500 V/us - 500 V/us
Maximum DC gate trigger current 35 mA - 35 mA
Maximum DC gate trigger voltage 1.3 V - 1.3 V
Maximum holding current 50 mA - 50 mA
JEDEC-95 code TO-220AB - TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3
JESD-609 code e3 - e3
Maximum leakage current 0.005 mA - 0.005 mA
Maximum operating temperature 125 °C - 125 °C
Minimum operating temperature -40 °C - -40 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Certification status Not Qualified - Not Qualified
Maximum rms on-state current 30 A - 30 A
surface mount NO - NO
Terminal surface Tin (Sn) - Tin (Sn)
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
Trigger device type SNUBBERLESS TRIAC - SNUBBERLESS TRIAC
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