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BY298

Description
2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size47KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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BY298 Overview

2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15

BY298 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current70 A
Number of components1
Maximum operating temperature150 °C
Maximum output current2 A
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.5 µs
surface mountNO
BY296 - BY299
PRV : 100 - 800 Volts
Io : 2.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
FAST RECOVERY
RECTIFIER DIODES
DO-201AD
0.21 (5.33)
0.19 (4.82)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 50
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
BY296
100
70
100
BY297
200
140
200
2.0
BY298
400
280
400
BY299
800
560
800
UNIT
V
V
V
A
Peak Forward Surge Current, 8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 2.0 Amps.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
I
FSM
V
F
I
R
I
R(H)
Trr
C
J
T
J
T
STG
70
1.3
10
500
250
28
- 50 to + 125
- 50 to + 150
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 02 : March 24, 2005

BY298 Related Products

BY298 BY297 BY296 BY299 BY296_05
Description 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE 2 A, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
Is it lead-free? Lead free Lead free Lead free Lead free -
Is it Rohs certified? conform to conform to conform to conform to -
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
Reach Compliance Code compli compli compli compli -
Configuration SINGLE SINGLE SINGLE SINGLE -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V -
Maximum non-repetitive peak forward current 70 A 70 A 70 A 70 A -
Number of components 1 1 1 1 -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C -
Maximum output current 2 A 2 A 2 A 2 A -
Maximum repetitive peak reverse voltage 400 V 200 V 100 V 800 V -
Maximum reverse recovery time 0.5 µs 0.5 µs 0.5 µs 0.5 µs -
surface mount NO NO NO NO -
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