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BYV36E

Description
Fast soft-recovery controlled avalanche rectifiers
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

BYV36E Overview

Fast soft-recovery controlled avalanche rectifiers

BYV36E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.45 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineTS 16949
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BYV36A - BYV36E
PRV : 200 - 1000 Volts
Io : 1.5 , 1.6 Ampere
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
VERY FAST SOFT-RECOVERY
AVALANCHE RECTIFIER DIODES
D2
0.161 (4.10)
0.154 (3.90)
1.00 (25.4)
MIN.
0.284 (7.21)
0.268 (6.81)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 grams
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Minimum Reverse Avalanche Breakdown Voltage @ I
R
= 0.1 mA
Maximum Average Forward Current ( Note 1 )
Maximum Non-Repetitive Peak Forward Current
Maximum Repetitive Peak Forward Current ( Ttp = 60
°
C )
Maximum Forward Voltage at 1.0 Amp. ; T
J
= 25
°
C
T
J
= 175
°
C
Maximum Reverse Current
SYMBOL
BYV36A BYV36B BYV36C BYV36D BYV36E
UNIT
V
RRM
V
R
V
(BR)R
I
F(AV)
I
FSM
I
FRM
V
F
V
F
I
R
I
R(H)
Trr
Rth j-tp
T
J
T
STG
100
46
175
- 65 to + 175
24
1.35
1.0
5.0
150
150
200
200
300
400
400
500
1.6
30
21
1.45
1.05
600
600
700
800
800
900
1.5
1000
1000
1100
V
V
V
A
A
A
V
V
V
R
= V
RRMmax
V
R
= V
RRMmax
; T
J
= 165
°C
µ
A
µ
A
ns
K/W
Maximum Reverse Recovery Time ( Note 2 )
Typical Thermal Resistance - Junction to tie-point
Junction Temperature Range
Storage Temperature Range
°
C
°
C
Notes :
( 1 ) Ttp = 60
°C
, lead length 10 mm.
( 2 ) Measured with I
F
= 0.5 A, I
R
= 1.0A, Irr = 0.25A.
Page 1 of 2
Rev. 02 : March 25, 2005

BYV36E Related Products

BYV36E BYV36B BYV36D BYV36A BYV36C
Description Fast soft-recovery controlled avalanche rectifiers Fast soft-recovery controlled avalanche rectifiers Fast soft-recovery controlled avalanche rectifiers Fast soft-recovery controlled avalanche rectifiers Fast soft-recovery controlled avalanche rectifiers
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.45 V 1.35 V 1.45 V 1.35 V 1.35 V
JEDEC-95 code DO-15 DO-15 DO-15 DO-15 DO-15
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 1.5 A 1.6 A 1.5 A 1.6 A 1.6 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Guideline TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
Maximum repetitive peak reverse voltage 1000 V 400 V 800 V 200 V 600 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.15 µs 0.1 µs 0.15 µs 0.1 µs 0.1 µs
surface mount NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
ECCN code - EAR99 EAR99 - EAR99
Base Number Matches - 1 1 1 1

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