BYV95A_05 datasheet, PDF - EEWORLD Datasheet

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BYV95A_05: Description1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AP; Categorysemiconductor Discrete semiconductor; File Size41KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]

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BYV95A_05 Overview

1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AP

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BYV95A - BYV96E

PRV : 200 - 1000 Volts

Io : 1.5 Amperes

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Fast switching for high efficiency

* Pb / RoHS Free

AVALANCHE FAST RECOVERY

RECTIFIER DIODES

D2

0.161 (4.10)

0.154 (3.90)

1.00 (25.4)

MIN.

0.284 (7.21)

0.268 (6.81)

MECHANICAL DATA :

* Case : D2 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.465 gram

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°

C ambient temperature unless otherwise specified.

Single phase, half wave, 50 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS voltage

Maximum DC Blocking Voltage

Min. Avalanche Breakdown Voltage @ 100

µA

Maximum Average Forward Rectified Current

Lead Length 10 mm. ; T

tp

= 65

°C

Peak Forward Surge Current single half sine wave

superimposed on rated load

Maximum Forward Voltage at I

F

= 3.0 Amps.

Maximum DC Reverse Current

T

J

= 25

°C

at Rated DC Blocking Voltage

T

J

= 165

°C

Maximum Reverse Recovery Time ( Note 1 )

Typical Thermal Resistance (Note 2)

Junction Temperature Range

Storage Temperature Range

Notes :

SYMBOL

BYV95A BYV95B BYV95C BYV96D BYV96E

UNIT

V

RRM

V

RMS

V

DC

V

BR(

min.

)

I

F(AV

)

I

FSM

V

F

I

R

I

R(H)

Trr

R

θ

JA

T

J

T

STG

250

50

175

- 65 to + 175

200

140

200

300

400

280

400

500

600

420

600

700

1.5

35

1.6

5.0

150

300

800

560

800

900

1000

700

1000

1100

V

A

V

µA

ns

°C/W

°C

(1) Measured with I

F

= 0.5A, I

R

= 1.0A, Irr = 0.25A

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 02 : March 24, 2005

BYV95A_05 Related Products

	BYV95A_05	BYV95A	BYV95B	BYV95D	BYV96E	BYV95C
Description	1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AP	1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AP	RECTIFIER DIODE	1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AP	RECTIFIER DIODE	1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-204AP
Is it Rohs certified?	-	conform to	conform to	-	conform to	conform to
Maker	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
package instruction	-	O-PALF-W2	ROHS COMPLIANT, PLASTIC, D2, 2 PIN	-	ROHS COMPLIANT, PLASTIC, D2, 2 PIN	O-PALF-W2
Reach Compliance Code	-	compli	compli	-	compliant	compli
Other features	-	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY
application	-	EFFICIENCY	EFFICIENCY	-	EFFICIENCY	EFFICIENCY
Shell connection	-	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED
Configuration	-	SINGLE	SINGLE	-	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON	-	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	1.6 V	1.6 V	-	1.6 V	1.6 V
JESD-30 code	-	O-PALF-W2	O-PALF-W2	-	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	-	35 A	35 A	-	35 A	35 A
Number of components	-	1	1	-	1	1
Phase	-	1	1	-	1	1
Number of terminals	-	2	2	-	2	2
Maximum operating temperature	-	175 °C	175 °C	-	175 °C	175 °C
Maximum output current	-	1.5 A	1.5 A	-	1.5 A	1.5 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND	-	ROUND	ROUND
Package form	-	LONG FORM	LONG FORM	-	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	-	200 V	400 V	-	1000 V	600 V
Maximum reverse current	-	5 µA	5 µA	-	5 µA	5 µA
Maximum reverse recovery time	-	0.25 µs	0.25 µs	-	0.3 µs	0.25 µs
surface mount	-	NO	NO	-	NO	NO
technology	-	AVALANCHE	AVALANCHE	-	AVALANCHE	AVALANCHE
Terminal form	-	WIRE	WIRE	-	WIRE	WIRE
Terminal location	-	AXIAL	AXIAL	-	AXIAL	AXIAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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