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BCY79C

Description
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size33KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
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BCY79C Overview

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN

BCY79C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-206AA
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
BCY79
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
GENERAL PURPOSE,
SMALL SIGNAL, PNP TRANSISTOR
5.33 (0.210)
4.32 (0.170)
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
12.7 (0.500)
min.
3
1
APPLICATIONS:
Intended for use in audio input stages, driver
stages and low noise input applications. The
2
TO-18 (TO-206AA)
Pin 1 – Emitter
Underside View
PAD 2 – Base
PAD 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CEO
V
BEO
I
C
P
TOT
T
J
, T
STG
R
θ
JC
R
θ
JA
Collector - Emitter Voltage (I
B
=0)
Emitter - Base Voltage (I
C
=0)
Collector Current
Total Power Dissipation @ T
amb
25
°C
@ T
c
45
°C
Maximum Junction And Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
-45V
-5V
-200mA
390mW
1W
-55°C to 175°C
150°C/W
450°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5255
Issue 1

BCY79C Related Products

BCY79C BCY79B BCY79A
Description Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN
Is it Rohs certified? conform to conform to conform to
Maker TT Electronics plc TT Electronics plc TT Electronics plc
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 120 40
JEDEC-95 code TO-206AA TO-206AA TO-206AA
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 180 MHz 180 MHz 180 MHz

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