DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF2022-90; BLF2022S-90
UHF power LDMOS transistor
Product specification
Supersedes data of 2003 Feb 24
2003 Jun 13
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES
•
Typical W-CDMA performance at a supply voltage of
28 V and an I
DQ
of 750 mA:
– Output power = 11.5 W (AV)
– Gain = 12.5 dB
– Efficiency = 20%
– ACPR =
−42
dBc at 3.84 MHz
– d
im
=
−36
dBc
•
Easy power control
•
Excellent ruggedness
•
High power gain
•
Excellent thermal stability
•
Designed for broadband operation (2000 to 2200 MHz)
•
Internally matched for ease of use.
PINNING - SOT502A
PIN
1
2
3
drain
gate
source; connected to flange
DESCRIPTION
BLF2022-90; BLF2022S-90
APPLICATIONS
•
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT502B
PIN
1
2
3
drain
gate
source; connected to flange
DESCRIPTION
handbook, halfpage
1
1
3
2
Top view
3
MBK394
2
Top view
MBL105
Fig.1 Simplified outline SOT502A (BLF2022-90).
Fig.2 Simplified outline SOT502B (BLF2022S-90).
QUICK REFERENCE DATA
Typical RF performance at T
h
= 25
°C
in a common source class-AB test circuit.
MODE OF OPERATION
2-tone, class-AB
W-CDMA, 3GPP test
model 1, 64 channels
with 66% clipping
f
(MHz)
f
1
= 2170; f
2
= 2170.1
2140
V
DS
(V)
28
28
I
DQ
(mA)
750
750
P
L
(W)
90 (PEP)
15 (AV)
G
p
(dB)
12.8
13.2
η
D
(%)
35.7
20
d
im
(dBc)
−28.5
−
ACLR
5
(dBc)
−
−40
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Jun 13
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
PARAMETER
BLF2022-90; BLF2022S-90
MIN.
−
−
−
−65
−
MAX.
65
±15
12
+150
200
V
V
A
UNIT
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th c-h
Notes
1. Thermal resistance is determined under specified RF operating conditions.
2. Depending on mounting conditions.
CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rs
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 2.1 mA
V
DS
= 10 V; I
D
= 210 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 10 V; I
D
= 7.5 A
V
GS
= V
GSth
+ 9 V; I
D
= 7.5 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
MIN.
65
4.4
−
27
−
−
−
−
TYP.
−
−
−
−
−
6.2
0.1
5.1
MAX.
−
5.5
15
−
38
−
−
−
UNIT
V
V
µA
A
nA
S
Ω
pF
PARAMETER
thermal resistance from junction to case
thermal resistance from case to heatsink
CONDITIONS
T
h
= 25
°C;
note 1
T
h
= 25
°C;
note 2
VALUE
0.65
0.2
UNIT
K/W
K/W
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°C;
R
th j-c
= 0.65 K/W; unless otherwise specified.
MODE OF OPERATION
2-tone, class-AB
f
(MHz)
f
1
= 2170; f
2
= 2170.1
V
DS
(V)
28
I
DQ
(mA)
750
P
L
(W)
90 (PEP)
G
p
(dB)
>11
η
D
(%)
>30
d
im
(dBc)
≤−25
Ruggedness in class-AB operation
The BLF2022-90/BLF2022S-90 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through
all phases under the following conditions: V
DS
= 28 V; I
DQ
= 750 mA; P
L
= 90 W (CW); f = 2170 MHz.
2003 Jun 13
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90; BLF2022S-90
15
handbook, halfpage
Gp
(dB)
14
MLD837
50
η
D
(%)
40
handbook, halfpage
0
MLD838
dim
(dBc)
−20
d3
η
D
13
Gp
30
−40
d5
d7
20
−60
12
11
10
10
0
40
80
0
120
PL (PEP) (W)
−80
0
40
80
120
PL (PEP) (W)
V
DS
= 28 V; I
DQ
= 750 mA; T
h
= 25
°C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
V
DS
= 28 V; I
DQ
= 750 mA; T
h
= 25
°C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
Fig.3
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.4
Intermodulation distortion as a function of
peak envelope load power; typical values.
15
handbook, halfpage
Gp
(dB)
14
Gp
(2)
(1)
MLD839
50
η
D
(%)
40
handbook, halfpage
0
MLD840
η
D
dim
(dBc)
−20
13
(3)
30
(4)
−40
(5)
(6)
(1)
(2)
12
20
−60
(3)
11
10
10
0
40
80
0
120
PL (PEP) (W)
−80
0
40
80
120
PL (PEP) (W)
V
DS
= 28 V; T
h
= 25
°C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
(1) I
DQ
= 900 mA.
(2) I
DQ
= 750 mA.
(3) I
DQ
= 600 mA.
(4) I
DQ
= 600 mA.
(5) I
DQ
= 750 mA.
(6) I
DQ
= 900 mA.
V
DS
= 28 V; T
h
= 25
°C;
f
1
= 2170 MHz; f
2
= 2170.1 MHz.
(1) I
DQ
= 600 mA.
(2) I
DQ
= 900 mA.
(3) I
DQ
= 750 mA.
Fig.5
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.6
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
2003 Jun 13
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90; BLF2022S-90
handbook, halfpage
15
MLD833
30
Gp
η
D
(%)
handbook, halfpage
0
MLD834
Gp
(dB)
10
ACLR
(dBc)
−20
20
−40
ACLR5
5
10
−60
ACLR10
η
D
0
25
30
35
0
40
45
PL(AV) (dBm)
−80
25
30
35
45
40
PL(AV) (dBm)
Single carrier W-CDMA performance.
V
DS
= 28 V; I
DQ
= 750 mA; T
h
= 25
°C;
f = 2140 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Single carrier W-CDMA performance.
V
DS
= 28 V; I
DQ
= 750 mA; T
h
= 25
°C;
f = 2140 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Fig.8
Fig.7
Power gain and drain efficiency as functions
of average load power; typical values.
Adjacent channel leakage ratio (ACLR
5
and
ACLR
10
) as function of average load power;
typical values.
2003 Jun 13
5
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