BUX47.MOD datasheet, PDF - EEWORLD Datasheet

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BUX47.MOD: DescriptionPower Bipolar Transistor, 9A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size18KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BUX47.MOD Overview

Power Bipolar Transistor, 9A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

BUX47.MOD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Code	compliant
Shell connection	COLLECTOR
Maximum collector current (IC)	9 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	7 MHz

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BUX47

MECHANICAL DATA

Dimensions in mm

NPN SILICON

POWER TRANSISTOR

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

1.52 (0.06)

3.43 (0.135)

6.35 (0.25)

9.15 (0.36)

FEATURES

• Fast Turn-Off Time

• Hermetic Package

22.23

(0.875)

max.

38.61 (1.52)

39.12 (1.54)

29.9 (1.177)

30.4 (1.197)

16.64 (0.655)

17.15 (0.675)

1

2

0.97 (0.060)

1.10 (0.043)

Applications

3

(case)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

The BUX47 transistor is designed for high

voltage, high speed, power switching in

inductive circuits where fall time is critical. It is

particularily well suited for line operated switch

mode applications.

TO–204AA (TO–3)

PIN 1 — Base

PIN 2 — Emitter

Case is Collector.

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

CER

V

CES

V

CEO

V

EBO

I

C

I

CM

I

B

P

tot

T

STG

T

J

Collector – Base Voltage

Collector – Emitter Sustaining Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Collector Current

Peak Collector Current

Base Current

Total Power Dissipation

Derate above 25°C

Storage Temperature Range

Maximum Junction Temperature

t

p

= <5ms

(R

BE

= 10Ω)

(V

BE

= 0)

(I

B

= 0)

(I

C

= 0)

850V

400V

7V

9A

15A

8A

125W

0.83°C / W

–65 to +175°C

+175°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 5516

Issue 1

BUX47.MOD Related Products

	BUX47.MOD	BUX47R1	BUX47.MODR1
Description	Power Bipolar Transistor, 9A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN	Power Bipolar Transistor, 9A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN	Power Bipolar Transistor, 9A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it Rohs certified?	incompatible	conform to	conform to
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-3, 2 PIN	HERMETIC SEALED, METAL, TO-3, 2 PIN	HERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Code	compliant	compliant	compliant
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	9 A	9 A	9 A
Collector-emitter maximum voltage	400 V	400 V	400 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	5	5	5
JEDEC-95 code	TO-204AA	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	7 MHz	7 MHz	7 MHz
JESD-609 code	-	e1	e1
Terminal surface	-	TIN SILVER COPPER	TIN SILVER COPPER

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