TRENCHSTOP™ Series
IKW30N60T
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Features:
Very low V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterruptible Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
G
E
PG-TO247-3
Type
IKW30N60T
V
CE
600V
I
C
30A
V
CE(sat),Tj=25°C
1.5V
T
j,max
175C
Marking
K30T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage,
T
j
≥ 25C
DC collector current, limited by
T
jmax
T
C
= 25C, value limited by bondwire
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175C,
t
p
= 1µs
Diode forward current, limited by
T
jmax
T
C
= 25C, value limited by bondwire
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2)
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
-
Value
600
45
39
90
90
45
39
90
20
5
187
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
V
GE
= 15V,
V
CC
400V,
T
j
150C
Power dissipation
T
C
= 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.6 19.05.2015
IFAG IPC TD VLS
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 0 .2m A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 30 A
T
j
=2 5
C
T
j
=1 7 5 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 3 0 A
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 0. 43m A ,
V
CE
=
V
GE
V
C E
= 60 0 V
,
V
G E
= 0V
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
IKW30N60T
q
Max. Value
0.80
1.05
40
Unit
Symbol
Conditions
R
thJC
R
thJCD
R
thJA
K/W
Symbol
Conditions
Value
min.
600
-
-
-
-
4.1
typ.
-
1.5
1.9
1.65
1.6
4.9
max.
-
2.05
-
2.05
-
5.7
Unit
V
µA
-
-
-
-
-
-
-
16.7
-
40
2000
100
-
nA
S
Ω
I
GES
g
fs
R
Gint
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 30 A
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=3 0 A
V
G E
= 15 V
-
-
-
-
-
1630
108
50
167
13
275
-
-
-
-
-
-
pF
nC
nH
A
V
G E
= 15 V ,t
S C
5
s
V
C C
= 4 0 0 V,
T
j
= 15 0
C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.6 19.05.2015
IFAG IPC TD VLS
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 4 00 V ,
I
F
= 3 0 A,
d i
F
/ d t
=9 1 0 A/
s
-
-
-
-
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=25
C,
V
CC
=400V,
I
C
=30A,
V
GE
=0/15V,
r
G
=10.6
,
L
=136nH,
C
=39pF
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
IKW30N60T
q
Value
Unit
Symbol
Conditions
min.
-
-
-
-
-
-
-
Typ.
23
21
254
46
0.69
0.77
1.46
max.
-
-
-
-
-
-
-
ns
mJ
143
0.92
16.3
603
-
-
-
-
ns
µC
A
A/s
Switching Characteristic, Inductive Load,
at
T
j
=175
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 7 5 C
V
R
= 4 00 V ,
I
F
= 3 0 A,
d i
F
/ d t
=9 1 0 A/
s
-
-
-
-
225
2.39
22.3
310
-
-
-
-
ns
µC
A
A/s
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=175
C,
V
CC
=400V,
I
C
=30A,
V
GE
=0/15V,
r
G
=10.6
,
L
=136nH,
C
=39pF
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
Typ.
24
26
292
90
1.0
1.1
2.1
max.
-
-
-
-
-
-
-
Unit
ns
mJ
IFAG IPC TD VLS
3
Rev. 2.6 19.05.2015
TRENCHSTOP™ Series
100A
90A
80A
IKW30N60T
q
t
p
=2µs
10µs
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
70A
60A
50A
40A
30A
20A
10A
0A
100Hz
T
C
=110°C
T
C
=80°C
10A
50µs
1A
DC
I
c
I
c
1kHz
10kHz
100kHz
1ms
10ms
0.1A
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
175C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 10)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
175C;
V
GE
=0/15V)
160W
40A
P
tot
,
POWER DISSIPATION
I
C
,
COLLECTOR CURRENT
120W
30A
80W
20A
40W
10A
__
I
cmax
--- max. current limited by bondwire
0W
25°C
50°C
75°C
100°C 125°C 150°C
0A
25°C
50°C
75°C
100°C 125°C 150°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
175C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
15V,
T
j
175C)
IFAG IPC TD VLS
4
Rev. 2.6 19.05.2015
TRENCHSTOP™ Series
80A
70A
50A
V
G E
=20V
15V
50A
40A
30A
20A
10A
0A
0V
1V
2V
3V
0A
0V
1V
13V
11V
9V
7V
V
G E
=20V
IKW30N60T
q
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
60A
40A
15V
13V
30A
11V
9V
20A
7V
10A
2V
3V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 175°C)
50A
V
CE(sat),
COLLECTOR
-
EMITT SATURATION VOLTAGE
2.5V
I
C
=60A
I
C
,
COLLECTOR CURRENT
40A
2.0V
I
C
=30A
30A
1.5V
20A
T
J
=175°C
10A
25°C
0A
0V
2V
4V
6V
8V
1.0V
I
C
=15A
0.5V
0.0V
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=10V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(V
GE
= 15V)
IFAG IPC TD VLS
5
Rev. 2.6 19.05.2015
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