BLF145 datasheet, PDF - EEWORLD Datasheet

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BLF145: DescriptionRF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4; CategoryDiscrete semiconductor The transistor; File Size15KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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BLF145 Overview

RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4

BLF145 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, O-CRFM-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	Single
Minimum drain-source breakdown voltage	65 V
Maximum drain current (Abs) (ID)	6 A
Maximum drain current (ID)	3 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-CRFM-F4
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	68 W
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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BLF145

VHF POWER MOSFET

N-Channel Enhancement Mode

DESCRIPTION:

The

ASI BLF145

is Designed for

General Purpose Class AB Power

Amplifier Applications up to 175 MHz.

PACKAGE STYLE .380 4L FLG

.112 x 45°

A

B

S

D

Ø.125 NOM.

FULL R

J

.125

FEATURES:

•

P

G

= 20 dB Typ. at 30 W /28 MHz

•

Omnigold™

Metalization System

F

G

C

D

E

S

MAXIMUM RATINGS

I

D

V

(BR)DSS

V

GSS

P

DISS

T

J

T

STG

θ

JC

3.0 A

65 V

20 V

68 W @ T

C

= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

2.6 °C/W

DIM

A

B

C

D

E

F

G

H

I

J

.240 / 6.10

.004 / 0.10

.085 / 2.16

.160 / 4.06

MINIMUM

inches / mm

I

GH

MAXIMUM

inches / mm

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

CHARACTERISTICS

SYMBOL

V

(BR)DSS

I

DSS

I

GSS

V

GS

V

GS1

-V

GS2

G

FS

C

iss

C

oss

C

rss

P

G

η

D

V

GS

= 0 V

V

DS

= 28 V

V

DS

= 0 V

V

DS

= 10 V

V

DS

= 10 V

V

DS

= 10 V

T

C

= 25°C

NONETEST

CONDITIONS

I

DS

= 10 mA

V

GS

= 0 V

V

GS

= 20 V

I

D

= 10 mA

I

D

= 10 mA

I

D

= 1.5 A

MINIMUM TYPICAL MAXIMUM

65

---

2.0

1.2

---

125

75

11

20

40

---

2.0

1.0

4.5

100

---

UNITS

V

mA

µ

A

V

mV

S

V

GS

= 28 V

V

DS

= 0 V

f = 1.0 MHz

pF

V

DD

= 28

P

OUT

= 30 W

f = 28 MHz

dB

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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