DISCRETE SEMICONDUCTORS
DATA SHEET
BLV21
VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
BLV21
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°C
in an unneautralized common-emitter class-B circuit
MODE OF OPERATION
c.w.
V
CE
V
28
f
MHz
175
P
L
W
15
G
p
dB
>
10
η
%
>
65
z
I
Ω
1,4 + j1,85
Y
L
mS
33
−
j27,5
PIN CONFIGURATION
handbook, halfpage
PINNING
PIN
1
1
4
DESCRIPTION
collector
emitter
base
emitter
2
3
4
2
3
MSB057
Fig.1 Simplified outline, SOT123.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
max.
BLV21
65 V
36 V
4 V
1,75 A
5,0 A
36 W
200
°C
−65
to
+
150
°C
handbook, halfpage
2
MGP283
handbook, halfpage
60
MGP284
IC
(A)
1.5
Tmb = 25
°C
Ptot
(W)
40
ΙΙΙ
ΙΙ
derate by 0.2 W/K
1
Th = 70
°C
20
0.5
Ι
0.16 W/K
0
10
20
30
VCE (V)
40
0
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; V
CE
≤
28 V; f
>
1 MHz.
THERMAL RESISTANCE
(dissipation = 15 W; T
mb
= 74,5
°C,
i.e. T
h
= 70
°C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
=
=
=
6,55 K/W
4,95 K/W
0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS
T
j
= 25
°C
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 5 mA
Collector-emitter breakdown voltage
open base; I
C
= 25 mA
Emitter-base breakdown voltage
open collector; I
E
= 2 mA
Collector cut-off current
V
BE
= 0; V
CE
= 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
Ω
D.C. current gain
(1)
I
C
= 0,7 A; V
CE
= 5 V
Collector-emitter saturation voltage
(1)
I
C
= 2 A; I
B
= 0,4 A
Transition frequency at f = 100 MHz
(1)
−I
E
= 0,7 A; V
CB
= 28 V
−I
E
= 2 A; V
CB
= 28 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 28 V
Feedback capacitance at f = 1 MHz
I
C
= 100 mA; V
CE
= 28 V
Collector-flange capacitance
Note
1. Measured under pulse conditions: t
p
≤
200
µs; δ ≤
0,02.
C
re
C
cf
typ.
typ.
C
c
typ.
f
T
f
T
typ.
typ.
V
CEsat
typ.
h
FE
E
SBO
E
SBR
>
>
typ.
I
CES
<
V
(BR)EBO
>
V
(BR) CEO
>
V
(BR) CES
>
BLV21
65 V
36 V
4 V
2 mA
2,5 mJ
2,5 mJ
50
10 to 100
0,65 V
650 MHz
625 MHz
18 pF
12,8 pF
2 pF
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV21
handbook, halfpage
100
MGP285
handbook, halfpage
60
MGP286
hFE
75
Cc
(pF)
VCE = 28 V
40
50
5V
typ
20
25
0
0
2
IC (A)
4
0
0
10
20
30
VCB (V)
40
Fig.4 Typical values; T
j
= 25
°C.
Fig.5 I
E
= I
e
= 0; f = 1 MHz; T
j
= 25
°C.
handbook, full pagewidth
750
MGP287
fT
(MHz)
500
VCB = 28 V
20 V
250
0
0
1
2
3
4
−I
E (A)
5
Fig.6 Typical values; f = 100 MHz; T
j
= 25
°C.
August 1986
5
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