DISCRETE SEMICONDUCTORS
DATA SHEET
BLW81
UHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
The transistor is housed in a
1
⁄
4
"
capstan envelope with a ceramic cap.
BLW81
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°C
in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
c.w.
c.w.
V
CE
V
12,5
12,5
f
MHz
470
175
P
L
W
10
10
>
G
p
dB
6,0
>
typ. 13,5
η
%
60
typ. 60
z
i
Ω
1,3
+
j2,5
1,2
−
j0,6
Y
L
mS
150
−
j66
140
−
j80
PIN CONFIGURATION
PINNING - SOT122A.
PIN
1
2
DESCRIPTION
collector
emitter
base
emitter
handbook, halfpage
4
1
3
3
4
2
Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c. or average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
max
max
max
max
max
max
max
36 V
17 V
4 V
2,5 A
7,5 A
BLW81
40 W
200
°C
−65
to
+150 °C
MGP573
handbook, halfpage
10
MGP574
handbook, halfpage
50
Prf
IC
(A)
(W)
40
short time operation
during
r.f. power dissipation
VCE
≤
16.5 V
f
>
1 MHz
30
mismatch
derate by
0.204 W/K
continuous operation
Tmb = 25
°C
20
Th = 70
°C
10
1
1
10
VCE (V)
10
2
0
0
50
Th (°C)
100
Fig.2
Fig.3
THERMAL RESISTANCE
From junction to mounting base
From mounting base to heatsink
R
th j-mb
R
th mb-h
=
=
4,3 K/W
0,6 K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
°C
Breakdown voltages
Collector-emitter voltage
V
BE
= 0; I
C
= 25 mA
Collector-emitter voltage
open base; I
C
= 100 mA
Emitter-base voltage
open collector; I
E
= 10 mA
Collector cut-off current
V
BE
= 0; V
CE
= 17 V
D.C. current gain
(1)
I
C
= 1,25 A; V
CE
= 5 V
Collector-emitter saturation voltage
(1)
I
C
= 3,75 A; I
B
= 0,75 A
Transition frequency
at f = 500 MHz
(1)
I
C
= 1,25 A; V
CE
= 12,5 V
I
C
= 3,75 A; V
CE
= 12,5 V
Collector capacitance
at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 12,5 V
Feedback capacitance
at f = 1 MHz
I
C
= 100 mA; V
CE
= 12,5 V
Collector-stud capacitance
Note
1. Measured under pulse conditions: t
p
≤
200
µs; δ ≤
0,02.
C
re
C
cs
typ
typ
C
c
typ
f
T
f
T
typ
typ
V
CEsat
typ
h
FE
>
typ
I
CES
<
V
(BR)EBO
>
V
(BR)CEO
>
V
(BR)CES
>
BLW81
36 V
17 V
4 V
10 mA
10
35
0,75 V
1,3 GHz
0,9 GHz
34 pF
18 pF
1,2 pF
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLW81
MGP575
handbook, halfpage
40
VCE = 5 V
typ
Tj = 25
°C
handbook, halfpage
60
MGP576
IE = Ie = 0
f = 1 MHz
Tj = 25
°C
hFE
30
Cc
(pF)
40
typ
20
20
10
0
0
2.5
5
IC (A)
7.5
0
0
10
VCB (V)
20
Fig.4
Fig.5
handbook, full pagewidth
2
MGP577
fT
(GHz)
1.5
VCE = 12.5 V
f = 500 MHz
Tj = 25
°C
typ
1
0.5
0
0
2.5
5
IC (A)
7.5
Fig.6
March 1993
5
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