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BUR20

Description
50A, 125V, NPN, Si, POWER TRANSISTOR, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size42KB,2 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BUR20 Overview

50A, 125V, NPN, Si, POWER TRANSISTOR, TO-3

BUR20 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)50 A
Collector-emitter maximum voltage125 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment250 W
Maximum power dissipation(Abs)200 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Maximum off time (toff)1500 ns
Maximum opening time (tons)1500 ns
VCEsat-Max1.5 V

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