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BUR20CECC

Description
Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size52KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BUR20CECC Overview

Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

BUR20CECC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionTO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)50 A
Collector-emitter maximum voltage125 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
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