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BD236

Description
TRANSISTOR,BJT,PNP,60V V(BR)CEO,2A I(C),TO-126
CategoryDiscrete semiconductor    The transistor   
File Size39KB,1 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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BD236 Overview

TRANSISTOR,BJT,PNP,60V V(BR)CEO,2A I(C),TO-126

BD236 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
Reach Compliance Codecompliant
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)25 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)3 MHz
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