BUX82
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
Applications
The BUX82 is an epitaxial silicon NPN planar
transistor that has high current and high power
handling capability and high switching speed.
This device is especially suitable for
switching–control amplifiers, power gates, switch-
ing regulators, power-switching circuits convert-
ers, inverters and control circuits.Other recom-
mended applications include DC–RF amplifiers
and power oscillators.
TO–204AA (TO–3)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS
(T
j
= 25°C unless otherwise stated)
V
CESM
V
CER
V
CEO
I
C
I
CM
I
B
P
tot
T
STG
T
J
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Emitter Voltage(open base)
Collector Current (d.c)
Peak Collector Current
Base Current (d.c)
Total Power Dissipation T
mb
= 50°C
Storage Temperature Range
Maximum Junction Temperature
t
p
= 2ms
V
BE
= 0
R
BE
= 100
W
800V
500V
400V
6A
8A
2A
60W
-65 to +150°C
+150°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim.9/99
BUX82
ELECTRICAL CHARACTERISTICS
(Tj = 25°C unless otherwise stated)
Parameter
V
CEOsust
V
CERsust
V
CE(sat)
V
BE(sat)*
Collector - Emitter Sustaining
Voltage
Collector - Emitter Sustaining
Voltage
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)*
I
EBO
I
CES
h
FE
f
T
t
on
t
s
t
f
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Transition Frequency
Turn–On Time
Storage Time
Fall Time
I
C
= 0
V
CESMmax
I
C
= 0.6A
I
C
= 0.2A
I
C ON
= 2.5A
I
B1
= 0.5A
V
EB
= 10V
V
BE
= 0
V
CE
= 5V
V
CE
= 10V
V
CC
= 250V
I
B2
= 1A
30
6
0.3
2
0.5
3.5
0.3
I
C
= 4A
I
B
= 1.25A
1.6
10
1
mA
mA
—
MHz
I
C
= 2.5A
I
B
= 0.5A
1.4
V
3
L = 25mH
I
C
= 100mA
L = 15mH
Test Conditions
I
C
= 100mA
I
B
= 0
R
BE
= 100
W
Min.
400
500
Typ.
Max. Unit
V
V
1.5
m
s
THERMAL CHARACTERISTICS
R
th j-mb
Thermal Resistance Junction to Case
1.65
°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 3/94
京公网安备 11010802033920号
EEWORLD
