BUX82.MODR1 datasheet, PDF - EEWORLD Datasheet

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BUX82.MODR1: DescriptionPower Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size17KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BUX82.MODR1 Overview

Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN

BUX82.MODR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	TO-3, 2 PIN
Reach Compliance Code	compliant
Shell connection	COLLECTOR
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	6 MHz

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BUX82

MECHANICAL DATA

Dimensions in mm (inches)

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

1.52 (0.06)

3.43 (0.135)

6.35 (0.25)

9.15 (0.36)

HIGH CURRENT

HIGH SPEED

HIGH POWER

SILICON NPN PLANAR

TRANSISTOR

38.61 (1.52)

39.12 (1.54)

0.97 (0.060)

1.10 (0.043)

29.9 (1.177)

30.4 (1.197)

16.64 (0.655)

17.15 (0.675)

1

2

3

(case)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

22.23

(0.875)

max.

Applications

The BUX82 is an epitaxial silicon NPN planar

transistor that has high current and high power

handling capability and high switching speed.

This device is especially suitable for

switching–control amplifiers, power gates, switch-

ing regulators, power-switching circuits convert-

ers, inverters and control circuits.Other recom-

mended applications include DC–RF amplifiers

and power oscillators.

TO–204AA (TO–3)

PIN 1 — Base

PIN 2 — Emitter

Case is Collector.

ABSOLUTE MAXIMUM RATINGS

(T

j

= 25°C unless otherwise stated)

V

CESM

V

CER

V

CEO

I

C

I

CM

I

B

P

tot

T

STG

T

J

Collector – Emitter Voltage

Collector – Emitter Voltage(open base)

Collector Current (d.c)

Peak Collector Current

Base Current (d.c)

Total Power Dissipation T

mb

= 50°C

Storage Temperature Range

Maximum Junction Temperature

t

p

= 2ms

V

BE

= 0

R

BE

= 100

W

800V

500V

400V

6A

8A

2A

60W

-65 to +150°C

+150°C

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Prelim.9/99

BUX82.MODR1 Related Products

	BUX82.MODR1	BUX82R1	BUX82.MOD	BUX82
Description	Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN
Is it Rohs certified?	conform to	conform to	incompatible	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	6 A	6 A	6 A	6 A
Collector-emitter maximum voltage	400 V	400 V	400 V	400 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30
JEDEC-95 code	TO-204AA	TO-204AA	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	6 MHz	6 MHz	6 MHz	6 MHz

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