dziiE-u <^£.mL-L.onau,cto
r
L
I/
loaucti, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
BUW46
MECHANICAL DATA
Dimensions in mm(inches)
25.15(0.99)
26.67(1.05)
10.67(0.42)
11.18(0.44)
1.52(0.06)
3.43(0.135)
6 35 (0,25)
915(036]
NPN SILICON POWER
TRANSISTOR
FEATURES
• HIGH CURRENT
3
• FAST SWITCHING
• HIGH RELIABILITY
<
792(0312)
12 70 (0 50)
(case)
»
APPLICATIONS
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
TO-204AE (TO-3)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
VCES
V
CEO
Collector - Emitter Voltage (V
BE
= 0V)
Collector - Emitter Voltage (I
B
= 0)
Emitter - Base Voltage (l
c
= 0)
Collector Current
Peak Collector Current (t
p
= 10 ms)
Base Current
Total Power Dissipation at T
case
< 25°C
Storage Temperature
Junction Temperature
Thermal Resistance Junction to Case
900V
450V
7V
15A
30A
10A
175W
VEBO
'c
'CM
IB
Pfot
Tstg>
T
J
-65 to 200°C
200°C
1 .0°C/W
R
9JC
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BUW46
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Collector - Emitter Breakdown
VcEO(BR)*
Test Conditions
l
c
= 100mA
VCE =
9
00
V
l
c
= 0
I
C
= 10A
I
C
= 7A
I
C
=10A
I
C
= 7A
I
C
=10A
V
cc
= 250V
I
C
=10A
V
cc
= 250V
I
B1
=2A
I
B2
= -2A
V
BE
Min.
450
Typ. Max.
Unit
V
Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector - Emitter
Saturation Voltage
Base - Emitter
Saturation Voltage
Turn-On Time
Storage Time
Fall Time
'CES
= 0V
T
C
=125°C
V
EB
= 7V
I
B
= 2A
I
B
=1.0A
I
B
= 2A
I
B
= 1.0A
I
B1
=2A
500
3
1.0
1.5
1.5
1.8
1.4
Q75
HA
mA
mA
V
V
'EBO
V
CE(sat)*
V
BE(sat)*
ton
ts
tf
US
(IS
3
0.8
Pulse test: t
p
< 300|iS , 8 < 1.5%
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