lls
vie
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ia
duati,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD675, BD675A, BD677,
BD677A, BD679, BD679A,
BD681
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium-power silicon NPN Darlington
transistors can be used as output devices in complementary
general-purpose amplifier applications.
Features
• High DC Current Gain:
h
FE
= 750 (Min) @ I
c
= 1.5 and 2.0 Adc
• Monolithic Construction
• BD675. 675A, 677, 677A. 679, 679A, 681 are complementary
with BD676, 676A, 678. 678A, 680, 680A, 682
• BD677. 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR
2
BASE
3
EMITTER 1
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BD675, A
BD677, A
BD679, A
BD681
BD675, A
BD677, A
BD679, A
BD681
Symbol
VCEO
Value
Unit
45
60
80
100
45
60
80
100
5.0
4.0
1.0
Vdc
TO-225AA
Collector-Base Voltage
VCBO
Vdc
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25' C
Derate above 25 C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
VEBO
Vdc
Adc
Adc
W
W/
:
C
"C
Ic
IB
PD
Tj. T
st
g
40
0.32
-55 to + 150
Symbol
Max
3.13
Unit
<C/W
9jc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. Nl
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
(T
c
= 25°C unless otherwise noted)
|
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage, (Note 1)
(l
c
= 50 mAdc, IB = 0)
BD675, 675A
BD677, 677A
BD679, 679A
BD6S1
BVcEO
45
60
80
100
-
-
-
„
-
500
Vdc
Characteristic
Symbol
Min
Max
Unit
Collector Cutoff Current (V
C
E = Half Rated V
CEO
, I
B
= 0)
Collector Cutoff Current
(V
CB
= Rated BVcEO, IE = 0)
(V
CB
= Rated BV
CE
o, IE = °, T
c
= 100'C)
Emitter Cutoff Current (V
6
£ = 5.0 Vdc, l
c
= 0)
ON CHARACTERISTICS
DC Currert Gain, (Note 1 )
(l
c
= 1 .5 Adc.VcE = 3.0 Vdc)
(l
c
= 2.0 Adc, VCE = 3.0 Vdc)
Collector-Emitter Saturation Voltage, (Note 1)
(l
c
= 1 .5 Adc, IB = 30 mAdc)
(l
c
= 2.0 Adc, IB = 40 mAdc)
Base-Emitter On Voltage, (Note 1)
(l
c
= 1 .5 Adc, VCE = 3.0 Vdc)
(l
c
= 2.0 Adc, V
CE
= 3 0 Vdc)
DYNAMIC CHARACTERISTICS
[ Small Signal Current Gain (l
c
= 1 5 Adc, V
C
E = 3.0 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width < 300 |iS, Duty Cycle s 2.0%.
!CEO
jiAdc
mAdc
ICBO
-
-
0.2
2.0
2.0
IEBO
—
mAdc
HFE
BD675, 677, 679, 681
BD675A, 677 A, 679A
BD677, 679, 681
BD675A, 677 A, 679A
BD677, 679, 681
BD675A, 677A, 679A
750
750
-
-
"
2.5
2.8
2.5
2.5
VcE(sat)
VBE(on)
Vdc
Vdc
-
1.0
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
PACKAGE DIMENSIONS
TO-225AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M. 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE. NEW STANDARD
077-09.
INCHES
DIM
MIN
MAX
A
0.425
0.435
B JL295_J 0.305
C
0.095
0.105
D
0.020
0.026
F
0.115
0.130
G
0.094 BSC
H
0.050
0.095
0.015
0.025
J
K
0.575
0.655
M
5°
rvp
Q
0.148
0.158
R
0.045
0.065
S
0.025
0.035
U
0.145
0,155
—
V
0.040
STYLE 1:
PIN1. EMITTER
2. COLLECTOR
3. BASE
MILOMETERS
MIN
10.80
7.50
2.42
0.51
2.93
2.39
1.27
0.39
MAX
11.04
7.74
2.66
0.66
3.30
BSC
2.41
0.63
*'
J
14.61
5°
3.76
1.15
O.E4
3.69
1.02
rvp
16.63
4.01
1.65
0.88
3.93
S|$[0.25(0.010)® | A ® | B@
- D
2 PL
..
.
| ^| 0.25 (0.010)® | A ® | B ® |
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