BC309C datasheet, PDF - EEWORLD Datasheet

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BC309C: DescriptionSmall Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size355KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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BC309C Overview

Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

BC309C Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	380
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

LOW NOISE AMPLIFIER APPLICATION.

B

BC307/8/9

EPITAXIAL PLANAR PNP TRANSISTOR

C

FEATURES

・Low

Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.)

(V

CE

=-6V, I

C

=-0.1mA, f=1kHz).

・For

Complementary With NPN type BC237/238/239.

K

D

E

G

N

A

・High

Voltage : BC307 V

CEO

=-45V.

MAXIMUM RATING (Ta=25℃)

F

H

F

CHARACTERISTIC

BC307

Collector-Base Voltage

BC308

BC309

BC307

Collector-Emitter Voltage

BC308

BC309

BC307

Emitter-Base Voltage

BC308

BC309

BC307

Collector Current

BC308

BC309

BC307

Emitter Current

BC308

BC309

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

RATING

-50

UNIT

L

1

2

3

V

CBO

-30

-45

V

M

C

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

_

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

J

1. COLLECTOR

2. BASE

3. EMITTER

V

CEO

-25

-20

-5

V

TO-92

V

EBO

-5

-100

V

I

C

-100

-50

100

mA

I

E

100

50

mA

P

C

T

j

T

stg

625

150

-55½150

mW

℃

1994. 3. 2

Revision No : 0

1/2

BC309C Related Products

	BC309C	BC307A
Description	Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Parts packaging code	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.05 A	0.1 A
Collector-emitter maximum voltage	20 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	380	120
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz

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