BD379 datasheet, PDF - EEWORLD Datasheet

BD379: DescriptionPower Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,; CategoryDiscrete semiconductor The transistor; File Size39KB，1 Pages; ManufacturerCrimson Semiconductor Inc.

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BD379 Overview

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

Parameter Name	Attribute value
Maker	Crimson Semiconductor Inc.
Reach Compliance Code	unknown
Other features	LOW LEAKAGE
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	25 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
VCEsat-Max	1 V

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