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K7M163625M-TC90

Description
ZBT SRAM, 512KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
Categorystorage    storage   
File Size457KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7M163625M-TC90 Overview

ZBT SRAM, 512KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7M163625M-TC90 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time9 ns
JESD-30 codeR-PQFP-G100
length20 mm
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width36
Number of functions1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX36
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
width14 mm
K7M163625M
K7M161825M
Document Title
512Kx36 & 1Mx18 Flow-Through NtRAM
TM
512Kx36 & 1Mx18-Bit Flow Through NtRAM
TM
Revision History
Rev. No.
0.0
0.1
0.2
History
1. Initial document.
1. Update ICC & ISB values.
1. Change tOE from 3.5ns to 4.0ns at -8 .
2. Change tOE from 3.5ns to 4.0ns at -9 .
3. Change tOE from 3.5ns to 4.0ns at -10 .
1. Change I
SB
value from 60mA to 80mA at -8.
2. Change I
SB
value from 50mA to 70mA at -9 .
3. Change I
SB
value from 40mA to 60mA at -10 .
1. Changed tCYC from 12ns to 10ns at -9 .
2. Changed DC condition at Icc and parameters
Icc ; from 300mA to 320mA at -8,
from 260mA to 300mA at -9,
from 240mA to 280mA at -10
3. Change pin allocation at 119BGA .
- A4 ; from NC to A .
- B2 ; from A to CS2
- B4 ; from CKE to ADV
- B6 ; from A to CS2
- G4 ; from ADV to A
- H4 ; from NC to WE
- M4 ; from WE toCKE
1. Final Spec Release.
Nov. 19. 1999
Preliminary
Draft Date
March. 25. 1999
May. 27. 1999
June. 22. 1999
Remark
Preliminary
Preliminary
Preliminary
Sep. 04. 1999
0.3
Preliminary
0.4
1.0
Dec. 08. 1999
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
December 1999
Rev 1.0
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