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BB867

Description
8.7 pF, SILICON, VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size53KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BB867 Overview

8.7 pF, SILICON, VARIABLE CAPACITANCE DIODE

BB867...
Silicon Tuning Diode
For SAT tuners
High capacitance ratio
C
1V
/C
25V
(typ.15.8)
Low series inductance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BB867-02V

Type
BB867-02V
Package
SC79
Configuration
single
L
S
(nH)
0.6
Marking
Y
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage-
(R
5kΩ )
Forward current
Operating temperature range
Storage temperature
1
Pb-containing
Symbol
V
R
V
RM
I
F
T
op
T
stg
Value
30
35
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
package may be available upon special request
1
2007-04-20

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Description 8.7 pF, SILICON, VARIABLE CAPACITANCE DIODE 8.7 pF, SILICON, VARIABLE CAPACITANCE DIODE 8.7 pF, SILICON, VARIABLE CAPACITANCE DIODE
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