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BB914

Description
43.75 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size54KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BB914 Overview

43.75 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE

BB914 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresCAPACITANCE MATCHED TO 1.5 %
Minimum breakdown voltage18 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance2.86%
Minimum diode capacitance ratio2.28
Nominal diode capacitance43.75 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BB914...
Silicon Variable Capacitance Diode
For FM radio tuner with extended
frequency band
High tuning ratio at low supply voltage (car radio)
Monolitic chip (common cathode)
for perfect dual diode tracking
Good linearity for C- V curve
High figure of merit
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BB914
!
, 
,

Type
BB914
Package
SOT23
Configuration
common cathode
L
S
(nH)
1.8
Marking
SM
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
(
R
5kΩ )
Forward current
Operating temperature range
Storage temperature
1
Pb-containing
Symbol
V
R
V
RM
I
F
T
op
T
stg
Value
18
20
50
-55 ... 125
-55 ... 150
Unit
V
mA
°C
package may be available upon special request
1
2007-04-20

BB914 Related Products

BB914 BB914_07
Description 43.75 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE 43.75 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE
Minimum breakdown voltage 18 V 18 V
Diode component materials SILICON silicon
Diode type VARIABLE CAPACITANCE DIODE variable capacitance diode
Number of components 2 2
Number of terminals 3 3
surface mount YES Yes
Terminal form GULL WING GULL WING
Terminal location DUAL pair

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